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IEEE Electron Device Letters

Volumn 23, Issue 4, 2002, Pages 185-187

High-density MIM capacitors using Al 2O 3 and AlTiO x dielectrics

(5) Chen, S B b Lai, C H b Chin, Albert a,b Hsieh, J C c Liu, J c

a IEEE (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c UNITED MICROELECTRONICS CORPORATION (Taiwan)

Author keywords

Capacitor; Dielectric constant; Frequency dependence; High k; MIM; RF

Indexed keywords

CAPACITANCE REDUCTION; FABRICATION PROCESS; FREQUENCY RANGE; TEMPERATURE COEFFICIENT;

ALUMINUM COMPOUNDS; CAPACITANCE; DIELECTRIC MATERIALS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATING CIRCUITS; LEAKAGE CURRENTS; MIM DEVICES; PERMITTIVITY; RELIABILITY; TEMPERATURE; VLSI CIRCUITS;

CAPACITORS;

EID: 0036540809 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/55.992833 Document Type: Article

Times cited : (159)

References (12)

1
- 0034785113
- 2 gate dielectrics with dual poly-Si gate electrodes
- Proc. Symp. VLSI Technology, 2001 , pp. 133-134
- Lee, S.J.¹ Luan, H.F.² Lee, C.H.³ Jeon, T.S.⁴ Bai, W.P.⁵ Senzaki, Y.⁶ Roberts, D.⁷ Kwong, D.L.⁸

2
- 0033683689
- +-polysilicon gate
- Proc. Symp. VLSI Technology, 2000 , pp. 44-45
- Kang, L.¹ Jeon, Y.² Onishi, K.³ Lee, B.H.⁴ Qi, W.-J.⁵ Nieh, R.⁶ Gopalan, S.⁷ Lee, J.C.⁸

3
- 0003388250
- it
- Proc. Symp. VLSI Technology, 1999 , pp. 133-134
- Chin, A.¹ Liao, C.C.² Lu, C.H.³ Chen, W.J.⁴ Tsai, C.⁵

4
- 0035716620
- 3 stacked gate memory
- Washington, DC, Dec.
- (2001) IEDM Tech. Dig.
- Yang, M.Y.¹ Chen, S.B.² Chin, A.³ Sun, C.L.⁴ Lan, B.C.⁵ Chen, S.Y.⁶

5
- 0005813375
- 3 gate dielectrics
- Proc. Int. Workshop on Gate Insulator, Tokyo, Japan, Nov. 2001 , pp. 62-63
- Chin, A.¹ Chen, S.B.² Chan, K.T.³ Hsieh, J.C.⁴ Chang, M.H.⁵ Lin, C.C.⁶ Liu, J.⁷

6
- 0034258860
- The fabrication of very high resistivity Si with low loss and cross talk
- Sept.
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 394
- Wu, Y.H.¹ Chin, A.² Shih, K.H.³ Wu, C.C.⁴ Liao, C.P.⁵ Pai, S.C.⁶ Chi, C.C.⁷

7
- 0035683105
- Transmission line noise from standard and proton-implanted Si
- (2001) MTT-S Dig.
- Chan, K.T.¹ Chin, A.² Kwei, C.M.³ Shien, D.T.⁴ Lin, W.J.⁵

8
- 0035716971
- Integrated antennas on Si, proton-implanted Si and Si-on-quartz
- Washington, DC, Dec.
- (2001) IEDM Tech. Dig.
- Chan, K.T.¹ Chin, A.² Chen, Y.B.³ Lin, Y.-D.⁴ Duh, D.T.S.⁵ Lin, W.J.⁶

9
- 0033708950
- RF loss and crosstalk on extremely high resistivity (10k-1MΩ-cm) Si fabricated by ion implantation
- Proc. IEEE Microwave Theory and Techniques Soc. Int. Microwave Symp., 2000 , pp. 221-224
- Wu, Y.H.¹ Chin, A.² Shih, K.H.³ Wu, C.C.⁴ Liao, C.P.⁵ Pai, S.C.⁶ Chi, C.C.⁷

10
- 0033718337
- The performance limiting factors as RF MOSFETs scale down
- Radio Frequency Integrated Circuits Symp., 2000 , pp. 151-155
- Wu, Y.H.¹ Chin, A.² Liang, C.S.³ Wu, C.C.⁴

11
- 0035339020
- Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
- May
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 230-232
- Babcock, J.A.¹ Balster, S.G.² Pinto, A.³ Dirnecker, C.⁴ Steinmann, P.⁵ Jumpertz, R.⁶ El-Kareh, B.⁷

12
- 0032073125
- High-Q capacitors implemented in a CMOS process for low-power wireless applications
- (1998) MTT-S Dig. , pp. 505-511
- Hung, C.-M.¹ Ho, Y.-C.² Wu, I.-C.³ K, O.⁴

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