Resistive switching characteristics of Tm 2O 3, Yb 2O 3, and Lu 2O 3-based metal-insulator-metal memory devices

IEEE Transactions on Nanotechnology

Volumn 11, Issue 5, 2012, Pages 1040-1046

  Pan, Tung Ming ^a   Lu, Chih Hung ^a   Mondal, Somnath ^a   Ko, Fu Hsiang ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Lu 2O 3; rare earth (RE); resistive switching (RS); Tm 2O 3; Yb 2O 3

Indexed keywords

CONDUCTION MECHANISM; GOOD DATA; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY APPLICATIONS; METAL INSULATOR METALS; NON-VOLATILE; OHMIC BEHAVIOR; OPTIMAL CHEMICALS; RARE-EARTH (RE); RESISTIVE SWITCHING; ROOM-TEMPERATURE PROCESS; SPACE CHARGE LIMITED CONDUCTION;

ELECTROFORMING; SWITCHING SYSTEMS; TANTALUM COMPOUNDS;

YTTERBIUM;

EID: 84866064345     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2012.2211893     Document Type: Article

References (31)

1. G. I.Meijer, "Who wins the nonvolatile memory race?" Science, vol. 319, no. 4, pp. 1625-1626, Mar. 2008.
2. D. S. Jeong, H. Schroeder, U. Breuer, and R.Waser, "Characteristic electroforming behavior in Pt/TiO2 /Pt resistive switching
3. S. Seo,M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh,Y. S. Joung, I. K.Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S.
4. S. O. Kang, S. Hong, J. Choi, J. S. Kim, I. Hwang, I. S. Byun, K. S. Yun, and B. H. Park, "Electrochemical growth and resistive
5. W. C. Chien,Y. C. Chen, E. K. Lai, Y. D. Yao, P. Lin, S. F. Horng, J. Gong, T. H. Chou, H. M. Lin, M. N. Chang, Y. H. Shih
6. K. M. Kim, B. J. Choi, B. W. Koo, S. Choi, D. S. Jeong, and C. S. Hwang, "Resistive switching in Pt/Al2O3 /TiO2 /Ru stacked
7. E. A. Miranda, C. Walczyk, C. Wenger, and T. Schroeder, "Model for the resistive switching effect in HfO2 MIM structures
8. Q. Zuo, S. Long, S. Yang, Q. Liu, L. Shao, Q. Wang, S. Zhang, Y. Li, Y. Wang, and M. Liu, "ZrO2 -based memory cell with a
9. W. Y. Chang, C. A. Lin, J. H. He, and T. B. Wu, "Resistive switching behaviors of ZnO nanorod layers," Appl. Phys. Lett., vol.
10. J. J. Yang, F. Miao, M. D. Pickett, D. A. A. Ohlberg, D. R. Stewart, C. N. Lau, andR. S.Williams, "The mechanism of
11. O. Engstrom,B.Raeissi, S.Hall, O. Buiu,M. C. Lemme,H. D. B.Gottlob, P. K. Hurley, and K. Cherkaoui, "Navigation aids in the (Pubitemid 46550587)
12. M. Fanciulli and G. Scarel, Rare Earth Oxide Thin Film: Growth, Characterization, and Applications. Berlin, Germany:
13. X. Sun, B. Sun, L. Liu, N. Xu, X. Liu, R. Han, J. Kang, G. Xiong, and T. P. Ma, "Resistive switching in CeOx films for
14. X. Cao, X. Li, X. Gao, W. Yu, X. Liu, Y. Zhang, L. Chen, and X. Cheng, "Forming-free colossal resistive switching effect in
15. X. Gao,Y. Xia, B. Xu, J.Kong, H. Guo, K. Li,H. Li, H. Xu,K.Chen, J.Yin, and Z. Liu, "Unipolar resistive switching behaviors
16. S. Ohmi, C. Kobayashi, I. Kashiwagi, C. Ohshima, H. Ishiwara, and H. Iwai, "Characterization of La2O3 and Yb2O3 thin films
17. H. Ono and T. Katsumata, "Interfacial reactions between thin rare-earthmetal oxide films and Si substrates," Appl. Phys. Lett. (Pubitemid 33664344)
18. F. C. Chiu, H. W. Chou, and J. Y. Lee, "Electrical conduction mechanisms of metal/La2O3 /Si structure," J. Appl. Phys., vol.
19. Y. A. Teterin and A. Y. Teterin, "Structure of X-ray photoelectron spectra of lanthanide compounds," Russian Chem. Rev., vol.
20. J. F. Moulder,W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-Ray Photoelectron Spectroscopy: A Reference
21. R. Dong, W. F. Xiang, D. S. Lee, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M J. Kwon, M. Chang, M. Jo, M. Hasan, and H.
22. T. M. Pan and C. H. Lu, "Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room
23. L. Nagarajan, R. A. De Souza, D. Samuelis, I. Valov, A. Borger, J. Janek, K. D. Becker, P. C. Schmidt, and M. Martin, "A (Pubitemid 351585229)
24. H. D. Lee, B. Magyari-Kope, and Y Nishi, "Model of metallic filament formation and rupture inNiO for unipolar
25. D. A. Muller, N. Nakagawa, A. Ohtomo, J. L. Grazul, and H. Y. Hwang, "Atomic-scale imaging of nanoengineered oxygen (Pubitemid 39061677)
26. U. Russo, C. Cagli, S. Spiga, E. Cianci, and D. Ielmini, "Impact of electrode materials on resistive-switchingmemory
27. G. Lucovsky,Y. Zhang, G. B. Rayner, G. Appel, H. Ade, and J. L.Whitten, "Electronic structure of high-k transition metal (Pubitemid 35010087)
28. L. Marsella and V. Fiorentini, "Structure and stability of rare-earth and transition-metal oxides," Phys. Rev. B, vol. 69, no. 17
29. H. Lv, H. Wan, and T. Tang, "Improvement of resistive switching uniformity by introducing a thin GST interface layer," IEEE
30. K. Nagashima, T. Yanagida, K. Oka, and T. Kawai, "Unipolar resistive switching characteristics of room temperature grown
31. J. J. Huang, C. W. Kuo,W. C. Chang, and T. H. Hou, "Transition of stable rectification to resistive-switching in Ti/TiO2 /Pt