Improved resistance switching characteristics in Ti-Doped Yb 2O 3 for resistive nonvolatile memory devices

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 1069-1071

  Mondal, Somnath ^a   Her, Jim Long ^a   Chen, Fa Hsyang ^a   Shih, Shao Ju ^b   Pan, Tung Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Doping; Ni; resistive random access memory (ReRAM); TaN; Yb 2O 3; YbTiO x

Indexed keywords

BISTABLE RESISTANCE; CONVENTIONAL APPROACH; CURRENT CONDUCTION MECHANISMS; DATA LOSS; FUTURE MEMORY; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE MEMORY DEVICES; PROGRAM/ERASE; READ-OUT OPERATION; READOUT PROCESS; RESISTANCE DISTRIBUTION; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; ROOM TEMPERATURE; SCHOTTKY; SPACE-CHARGE-LIMITED CURRENT; SWITCHING VOLTAGES; TAN; TI DOPING; YBTIO X;

DEGRADATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; NICKEL; NONVOLATILE STORAGE; OXIDE FILMS; SEMICONDUCTOR DOPING; TANTALUM COMPOUNDS;

YTTERBIUM;

EID: 84862841603     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2196672     Document Type: Article

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