SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

Analysis on switching mechanism of graphene oxide resistive memory device

(4) Ki Hong, Seul a Eun Kim, Ji a Kim, Sang Ouk a Jin Cho, Byung a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; COMPREHENSIVE STUDIES; DUAL MECHANISMS; MEMORY DEVICE; OXYGEN MIGRATION; RESISTIVE SWITCHING MEMORIES; SWITCHING MECHANISM; SWITCHING OPERATIONS; SWITCHING PHENOMENON;

RANDOM ACCESS STORAGE; SURFACE ROUGHNESS; SWITCHING; SWITCHING SYSTEMS;

GRAPHENE;

EID: 80052418744 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3624947 Document Type: Article

Times cited : (89)

References (16)

1
- 35748974883
- 10.1038/nmat2023
- R. Waser and M. Aono, Nature Mater. 6, 833 (2007). 10.1038/nmat2023
- (2007) Nature Mater. , vol.6 , pp. 833
- Waser, R.¹ Aono, M.²

2
- 76649133422
- 10.1038/nnano.2009.456
- D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. S. Li, G. S. Park, B. R. Lee, S. W. Han, M. Y. Kim, and C. S. Hwang, Nat. Nanotechnol. 5, 148 (2009). 10.1038/nnano.2009.456
- (2009) Nat. Nanotechnol. , vol.5 , pp. 148
- Kwon, D.H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.S.⁷ Park, G.S.⁸ Lee, B.R.⁹ Han, S.W.¹⁰ Kim, M.Y.¹¹ Hwang, C.S.¹²

3
- 64749107196
- 10.1002/adem.200800294
- T. Mikolajich, M. Salinga, M. Kund, and T. Kever, Adv. Eng. Mater. 11, 235 (2009). 10.1002/adem.200800294
- (2009) Adv. Eng. Mater. , vol.11 , pp. 235
- Mikolajich, T.¹ Salinga, M.² Kund, M.³ Kever, T.⁴

4
- 33748801714
- M. Colle, M. Buchel, and D. M. de Leeuw, Org. Electron. 7, 305 (2006).
- (2006) Leeuw, Org. Electron. , vol.7 , pp. 305
- Colle, M.¹ Buchel, M.² De Leeuw, D.M.³

5
- 36049023738
- 10.1063/1.2806275
- F. Verbakel, S. C. J. Meskers, and R. A. J. Janssen, Appl. Phys. Lett. 91, 192103 (2007). 10.1063/1.2806275
- (2007) Appl. Phys. Lett. , vol.91 , pp. 192103
- Verbakel, F.¹ Meskers, S.C.J.² Janssen, R.A.J.³

6
- 77956172739
- 10.1109/LED.2010.2053695
- S. K. Hong, J. E. Kim, S. O. Kim, S-Y. Choi, and B. J. Cho, IEEE Electron Device Lett. 31, 1005 (2010). 10.1109/LED.2010.2053695
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1005
- Hong, S.K.¹ Kim, J.E.² Kim, S.O.³ Choi, S.-Y.⁴ Cho, B.J.⁵

7
- 78449291907
- 10.1021/nl101902k
- H. Y. Jeong, J. Y. Kim, J. W. Kim, J. O. Hwang, J-E. Kim, J. Y. Lee, T. H. Yoon, B. J. Cho, S. O. Kim, R. S. Ruoff, and S-Y. Choi, Nano Lett. 10, 4381 (2010). 10.1021/nl101902k
- (2010) Nano Lett. , vol.10 , pp. 4381
- Jeong, H.Y.¹ Kim, J.Y.² Kim, J.W.³ Hwang, J.O.⁴ Kim, J.-E.⁵ Lee, J.Y.⁶ Yoon, T.H.⁷ Cho, B.J.⁸ Kim, S.O.⁹ Ruoff, R.S.¹⁰ Choi, S.-Y.¹¹

8
- 33947461960
- 10.1021/ja01539a017
- W. S. Hummers and R. E. Offeman, J. Am. Chem. Soc. 80, 1339 (1958). 10.1021/ja01539a017
- (1958) J. Am. Chem. Soc. , vol.80 , pp. 1339
- Hummers, W.S.¹ Offeman, R.E.²

9
- 61849124694
- 10.1021/nl8023092
- J. T. Robinson, M. Zalalutdinov, J. W. Baldwin, E. S. Snow, Z. Q. Wei, P. Sheehan, and B. H. Houston, Nano Lett. 8, 3441 (2008). 10.1021/nl8023092
- (2008) Nano Lett. , vol.8 , pp. 3441
- Robinson, J.T.¹ Zalalutdinov, M.² Baldwin, J.W.³ Snow, E.S.⁴ Wei, Z.Q.⁵ Sheehan, P.⁶ Houston, B.H.⁷

10
- 0342359515
- 10.1038/1821296a0
- R. A. Miller, Nature 182, 1296 (1958). 10.1038/1821296a0
- (1958) Nature , vol.182 , pp. 1296
- Miller, R.A.¹

11
- 44849129646
- 10.1063/1.2938049
- T. Harada, I. Ohkubo, K. Tsubouchi, H. Kumigashira, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, and M. Oshima, Appl. Phys. Lett. 92, 222113 (2008). 10.1063/1.2938049
- (2008) Appl. Phys. Lett. , vol.92 , pp. 222113
- Harada, T.¹ Ohkubo, I.² Tsubouchi, K.³ Kumigashira, H.⁴ Ohnishi, T.⁵ Lippmaa, M.⁶ Matsumoto, Y.⁷ Koinuma, H.⁸ Oshima, M.⁹

12
- 77956364713
- 10.1063/1.3484956
- D. Joung, A. Chunder, L. Zhai, and S. I. Khondaker, Appl. Phys Lett. 97, 093105 (2010). 10.1063/1.3484956
- (2010) Appl. Phys Lett. , vol.97 , pp. 093105
- Joung, D.¹ Chunder, A.² Zhai, L.³ Khondaker, S.I.⁴

13
- 78650889016
- 10.1109/LED.2010.2084560
- J. B. Park, M. S. Jo, J. M. Lee, S. J. Jung, S. H. Kim, W. T. Lee, J. H. Shin, and H. S. Hwang, IEEE Electron Device Lett. 32, 63 (2011). 10.1109/LED.2010.2084560
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 63
- Park, J.B.¹ Jo, M.S.² Lee, J.M.³ Jung, S.J.⁴ Kim, S.H.⁵ Lee, W.T.⁶ Shin, J.H.⁷ Hwang, H.S.⁸

14
- 76649133422
- 10.1038/nnano.2009.456
- D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. R. Lee, S. W. Han, M. Y. Kim, and C. S. Hwang, Nat. Nanotechnol. 5, 148 (2010). 10.1038/nnano.2009.456
- (2010) Nat. Nanotechnol. , vol.5 , pp. 148
- Kwon, D.-H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.-S.⁷ Park, G.-S.⁸ Lee, B.R.⁹ Han, S.W.¹⁰ Kim, M.Y.¹¹ Hwang, C.S.¹²

15
- 67650102619
- 10.1002/adma.200900375
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

16
- 71949128933
- 10.1063/1.3271177
- C. L. He, F. Zhuge, X. F. Zhou, M. Li, G. C. Zhou, Y. W. Liu, J. Z. Wang, B. Chen, W. J. Su, Z. P. Liu, Y. H. Wu, P. Cui, and R.-W. Li, Appl. Phys. Lett, 95, 232101 (2009). 10.1063/1.3271177
- (2009) Appl. Phys. Lett , vol.95 , pp. 232101
- He, C.L.¹ Zhuge, F.² Zhou, X.F.³ Li, M.⁴ Zhou, G.C.⁵ Liu, Y.W.⁶ Wang, J.Z.⁷ Chen, B.⁸ Su, W.J.⁹ Liu, Z.P.¹⁰ Wu, Y.H.¹¹ Cui, P.¹² Li, R.-W.¹³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.