Flexible resistive switching memory device based on amorphous InGaZnO film with excellent mechanical endurance

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1442-1444

  Wang, Z Q ^a   Xu, H Y ^a   Li, X H ^a   Zhang, X T ^a   Liu, Y X ^a   Liu, Y C ^a  

^a NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

Amorphous IGZO; flexible resistive random access memory (RRAM); mechanical endurance

Indexed keywords

CONDUCTING CHANNELS; DEVICE PERFORMANCE; FLEXIBLE RESISTIVE RANDOM ACCESS MEMORY (RRAM); HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; OXYGEN-DEFICIENT DEFECTS; PARTIAL OXIDATIONS; PERFORMANCE DEGRADATION; PLASTIC SUBSTRATES; RESISTIVE SWITCHING MEMORIES; ROOM TEMPERATURE; TEMPERATURE DEPENDENT;

AMORPHOUS FILMS; BENDING TESTS; DEFECTS; DURABILITY; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; EQUIPMENT; NONVOLATILE STORAGE;

RANDOM ACCESS STORAGE;

EID: 80053563016     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2162311     Document Type: Article

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