Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application

Journal of the Electrochemical Society

Volumn 150, Issue 7, 2003, Pages

  Ohmi, S ^a   Kobayashi, C ^a   Kashiwagi, I ^a   Ohshima, C ^a   Ishiwara, H ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATORS; ELECTRIC PROPERTIES; ENERGY GAP; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; RAPID THERMAL ANNEALING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; YTTERBIUM COMPOUNDS;

BANDGAP; CAPACITANCE VOLTAGE; GATE INSULATOR; LATTICE ENERGY;

OXIDES;

EID: 0042848701     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1581278     Document Type: Article

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