Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition

Applied Physics Letters

Volumn 103, Issue 25, 2013, Pages

  Ma, Alex M ^a   Gupta, Manisha ^a   Afshar, Amir ^a   Shoute, Gem ^a   Tsui, Ying Y ^a   Cadien, Kenneth C ^a   Barlage, Douglas W ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; ENHANCEMENT-MODE; HIGH BREAKDOWN VOLTAGE; LOW TEMPERATURES; OUTPUT CONDUCTANCE; SCHOTTKY BARRIERS; SUBTHRESHOLD SWING; TOP GATE;

DEPOSITION; ELECTRONIC PROPERTIES; HAFNIUM OXIDES; SCHOTTKY BARRIER DIODES; THIN FILM TRANSISTORS; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84891425409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4836955     Document Type: Article

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