Bias-temperature-stress characteristics of ZnO/HfO 2 thin-film transistors

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1488-1493

  Siddiqui, Jeffrey J ^a   Phillips, Jamie D ^a   Leedy, Kevin ^b   Bayraktaroglu, Burhan ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Bias temperature stress (BTS); hafnium oxide (HfO 2); negative bias temperature instability (NBTI); positive bias temperature instability (PBTI); zinc oxide (ZnO)

Indexed keywords

BIAS-TEMPERATURE-STRESS (BTS); CHANNEL MOBILITY; DEFECT STATE; DIELECTRIC CHARGE; DOMINANT MECHANISM; LINEAR-SHIFT; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEGATIVE VOLTAGE; POSITIVE BIAS TEMPERATURE INSTABILITIES; POSITIVE VOLTAGE; STRESS VOLTAGES; SUBTHRESHOLD SLOPE; TEST METHOD; THIN FILM TRANSISTORS (TFT); THRESHOLD VOLTAGE SHIFTS; ZINC OXIDE (ZNO); ZNO;

HAFNIUM OXIDES; INTEGRATED CIRCUIT TESTING; INTERFACE STATES; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC OXIDE;

BIAS VOLTAGE;

EID: 84860249607     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2189048     Document Type: Article

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