High-performance thin-film transistors in disordered and poor-quality semiconductors

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 354-358

  Shannon, John M ^a   Balon, Franisek ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Device modeling; Disordered semiconductors; Field effect transistor (FET); Polymers; Schottky barrier; Source gated transistor (SGT); Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CARRIER MOBILITY; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES; SEMICONDUCTING POLYMERS;

DISORDERED SEMICONDUCTORS; LARGE AREA ELECTRONICS; SOURCE-GATED TRANSISTOR (SGT);

THIN FILM TRANSISTORS;

EID: 33847661892     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888753     Document Type: Article

References (23)

1. J. B. Lee and V. Subramanian, "Weave patterned organic transistors on fiber for e-textiles," IEEE Trans. Electron Devices, vol. 52, no. 2, pp. 269-275, Feb. 2005.
2. S. R. Forrest, "The path to ubiquitous and low-cost organic electronic appliances on plastic," Nature, vol. 428, no. 6986, pp. 911-918, Apr. 2004.
3. G. H Gelinck, H. E. A. Huitema, E. Van Veenendaal, E. Cantatore, L. Schrijnemakers, J. Van Der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B.-H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. Van Rens, and D. M. De Leeuw, "Flexible active-matrix displays and shift registers based on solution-processed organic transistors," Nat. Mater., vol. 3, no. 2, pp. 106-110, Feb. 2004.
4. D. B. Mitzi, L. L. Kosbar, C. E. Murray, M. Copel, and A. Afzali, "High-mobility ultrathin semiconducting films prepared by spin coating," Nature, vol. 428, no. 6980, pp. 299-303, Mar. 2004.
5. H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E. P. Woo, "High-resolution inkjet printing of all-polymer transistor circuits," Science, vol. 290, no. 5499, pp. 2123-2126, Dec. 2000.
6. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
7. M. G. Kanatzidis, "Quick-set thin films," Nature, vol. 428, no. 6980, pp. 269-271, Mar. 2004.
8. C. R. Kagan, D. B. Mitzi, and C. D. Dimitrakopoulos, "Organic-inorganic hybrid materials as semiconducting channels in thin-film field effect transistors," Science, vol. 286, no. 5441, pp. 945-947, Oct. 1999.
9. M. Stutzmann, "Metastability in amorphous and microcrystalline semiconductors," in Amorphous and Microcrystalline Semiconductor Devices, vol. 2, J. Kanicki, Ed. Boston, MA: Artech House, 1992, pp. 129-187.
10. W. B. Jackson, J. M. Marshall, and M. D. Moyer, "Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon," Phys. Rev. B, Condens. Matter, vol. 39, no. 2, pp. 1164-1179, Jan. l989.
11. A. J. Heeger, S. Kivelson, J. R. Schrieffer, and W.-P. Su, "Solitons in conducting polymers," Rev. Mod. Phys., vol. 60, no. 3, pp. 781-850, Jul. 1988.
12. V. I. Arkhipov, P. Heremans, E. V. Emelianova, and H. Bässler, "Effect of doping on the density-of-states distribution and carrier hopping in disordered organic semiconductors," Phys. Rev. B, Condens. Matter, vol. 71, no. 4, pp. 045 214-045 217, Jan. 2005.
13. H. Bässler, "Charge transport in disordered organic photoconductors. A Monte Carlo simulation study," Phys. Status Solidi, B, vol. 175, no. 1, pp. 15-56, 1993.
14. S. Shaked, S. Tal, Y. Roichman, A. Razin, S. Xiao, Y. Eichen, and N. Tessler, "Charge density and film morphology dependence of charge mobility in polymer field-effect transistors," Adv. Mater., vol. 15, no. 11, pp. 913-916, 2003.
15. S. Verlaak, V. I. Arkhipov, and P. Heremans, "Modelling of transport in polycrystalline organic semiconductors films," App. Phys. Lett., vol. 82, no. 5, pp. 745-747, Feb. 2003.
16. I. I. Fishchuk, A. Kadachchuk, H. Bässler, and S. Nespurek, "Nondispersive polaron transport in disordered organic solids," Phys. Rev. B, Condens. Matter, vol. 67, no. 22, pp. 221 303-221 310, Jun. 2003.
17. Thin-Film Transistors, C. R. Kagan and P. Andry, Eds. New York: Marcel Dekker, 2003.
18. J. M. Shannon and E. G. Gerstner, "Source-gated thin-film transistors," IEEE Electron Device Lett., vol. 24, no. 6, pp. 405-407, Jun. 2003.
19. J. M. Shannon and E. G. Gerstner, "Source-gated transistors in hydrogenated amorphous silicon," Solid State Electron., vol. 48, no. 7, pp. 1155-1161, Jul. 2004.
20. F. Balon, J. M. Shannon, and B. J. Sealy, "Modeling of the high-current source-gated transistors in amorphous silicon," App. Phys. Lett., vol. 86, no. 7, p. 073 503-3, Feb. 2005.
21. F. Balon and J. M. Shannon, "Analysis of Schottky barrier source-gated transistors in a-Si:H," Solid State Electron., vol. 50, no. 3, pp. 378-383, Mar. 2006.
22. F. Balon and J. M. Shannon, "Modeling of source-gated transistors in amorphous silicon," J. Electrochem. Soc., vol. 152, no. 8, pp. G674-G677, 2005.
23. Hydrogenated Amorphous Silicon, R. A. Street, Ed. Cambridge, U.K.: Cambridge Univ. Press, 1991.