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Applied Physics A: Materials Science and Processing

Volumn 110, Issue 4, 2013, Pages 793-798

Optimization of Pulsed Laser Deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

(4) Gupta, Manisha a Chowdhury, Fatema Rezwana a Barlage, Douglas a Tsui, Ying Yin a

a UNIVERSITY OF ALBERTA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; C. THIN FILM TRANSISTOR (TFT); GROWTH CONDITIONS; HIGH-MOBILITY FILMS; LOW TEMPERATURE GROWTH; PHASE FORMATIONS; SUBSTRATE TEMPERATURE; THIN-FILM GROWTH PARAMETERS;

AIR MOBILITY; ANNEALING; CARRIER CONCENTRATION; FILM GROWTH; OPTIMIZATION; OXYGEN; PULSED LASER DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84883211508 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-012-7154-5 Document Type: Article

Times cited : (18)

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