Modeling of source-gated transistors in amorphous silicon

Journal of the Electrochemical Society

Volumn 152, Issue 8, 2005, Pages

  Balon, F ^a   Shannon, J M ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HYDROGENATION; SCHOTTKY BARRIER DIODES;

ELECTRON CONCENTRATION; SATURATION VOLTAGE; SOURCE-GATED TRANSISTORS;

AMORPHOUS SILICON;

EID: 25644449545     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1946507     Document Type: Article

References (14)

1. J. M. Shannon and E. G. Gerstner, IEEE Electron Device Lett., 24, 405 (2003).
2. J. M. Shannon and E. G. Gerstner, Solid-State Electron., 48, 1155 (2004).
3. J. M. Shannon, Appl. Phys. Lett., 85, 326 (2004).
4. J. M. Shannon and F. Balon, in Proceedings of 34th ESSDERC 2004, Leuven, Belgium, p. 125, IEEE Cat. No.04EX851 (2004).
5. J. M. Shannon and F. Balon, in Digest of Technical Papers AM-LCD'04, p. 321, TFT3-4, The Japan Society of Applied Physics Cat. No. AP041239 (2004).
6. F. Balon, J. M. Shannon, and B. J. Sealy, Appl. Phys. Lett., 86, 073503 (2005).
7. T. Lindner, G. Paasch, and S. Scheinert, J. Mater. Res., 19, 2015 (2004).
8. T. Lindner, G. Paasch, and S. Scheinert, IEEE Trans. Electron Devices, 52, 47 (2005).
9. SILVACO ATLAS user's manual, Silvaco International Inc.
10. K. Yang, J. R. East, and G. I. Haddad, Solid-State Electron., 36, 321 (1993).
11. J. M. Shannon and K. J. B. M. Nieuwesteeg, Appl. Phys. Lett., 62, 1815 (1993).
12. Hydrogenated Amorphous Silicon, R. A. Street, Editor, Cambridge University Press, Cambridge (1991).
13. Amorphous and Microcrystalline Semiconductor Devices, Vol. II, J. Kanicki, Editor, Artech House, Inc., Norwood, MA (1992).
14. J.-K. Yoon and J.-H. Kin, IEEE Electron Device Lett., 19, 335 (1998).