The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD

Applied Surface Science

Volumn 257, Issue 8, 2011, Pages 3776-3779

  Kim, Doyoung ^a   Kang, Hyemin ^a   Kim, Jae Min ^a   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

Author keywords

ALD; Plasma enhanced; Thermal; Thin film transistor; ZnO

Indexed keywords

ATOMS; GROWTH TEMPERATURE; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OXIDE FILMS; OXYGEN; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; ZINC OXIDE;

DEVICE PROPERTIES; LOW GROWTH TEMPERATURE; OXYGEN INTERSTITIALS; PHOTOLUMINESCENCE MEASUREMENTS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; RESISTIVITY VALUES; THERMAL; ZINC OXIDE (ZNO);

ATOMIC LAYER DEPOSITION;

EID: 78651360283     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.11.138     Document Type: Article

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