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Applied Physics A: Materials Science and Processing

Volumn 101, Issue 4, 2010, Pages 685-688

Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors

(5) Yoshida, T a Tachibana, T a Maemoto, T a Sasa, S a Inoue, M a

a OSAKA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; GLASS SUBSTRATES; GROWTH CONDITIONS; HALL EFFECT MEASUREMENT; HIGH-K GATE INSULATOR; ON/OFF RATIO; OXYGEN GAS PRESSURE; ROOM TEMPERATURE; ROOT MEAN SQUARE ROUGHNESS; SUBTHRESHOLD; WURTZITE PHASE; XRD; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMIC FORCE MICROSCOPY; DIFFRACTION; DRAIN CURRENT; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALVANOMAGNETIC EFFECTS; GLASS; GLASS LASERS; GYRATORS; HAFNIUM COMPOUNDS; HALL MOBILITY; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PULSED LASERS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

THIN FILM TRANSISTORS;

EID: 78650603687 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-5973-9 Document Type: Article

Times cited : (22)

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