Zinc oxide thin film transistors with Schottky source barriers

Solid-State Electronics

Volumn 76, Issue , 2012, Pages 104-108

  Ma, Alex M ^a   Gupta, Manisha ^a   Chowdhury, Fatema Rezwana ^a   Shen, Mei ^a   Bothe, Kyle ^a   Shankar, Karthik ^a   Tsui, Ying ^a   Barlage, Douglas W ^a  

^a Department of Electrical and Computer Engineering ^*  (Canada)

Author keywords

Pulsed laser deposition; Schottky barrier MOSFET; Source gated transistor; Thin film transistor; ZnO

Indexed keywords

CAPACITANCE; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; II-VI SEMICONDUCTORS; OXIDE FILMS; PULSED LASER DEPOSITION; PULSED LASERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; THERMIONIC EMISSION; THIN FILM TRANSISTORS; THIN FILMS; ZINC OXIDE;

CAPACITANCE VOLTAGE CHARACTERISTIC; CARRIER INJECTION MECHANISM; FIELD-EFFECT MOBILITIES; LOW SATURATION VOLTAGES; SCHOTTKY-BARRIER MOSFET; SOURCE GATED TRANSISTORS; TRANSISTOR CHARACTERISTICS; ZINC OXIDE THIN FILMS;

THIN FILM CIRCUITS;

EID: 84864465383     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.05.005     Document Type: Letter

References (37)

1. D.C. Look Recent advances in ZnO materials and devices Mater Sci Eng B 80 2001 383 387
2. U. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, and S. Dogan A comprehensive review of ZnO materials and devices J Appl Phys 98 2005 041301
3. C. Klingshirn ZnO: from basics towards applications Phys Status Solidi (b) 244 2007 3027 3073
4. M. Ohyama, H. Kouzuka, and T. Yoko Sol-gel preparation of ZnO films with extremely preferred orientation along (0 0 2) plane from zinc acetate solution Thin Solid Films 306 1997 78 85
5. E. Fortunato, P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, and L. Pereira Recent advances in ZnO transparent thin film transistors Thin Solid Films 487 2005 205 211
6. B. Bayraktaroglu, K. Leedy, and R. Neidhard High-frequency ZnO thin-film transistors on Si substrates IEEE Electron Dev Lett 30 2009 946 948
7. V. Avrutin, D.J. Silversmith, and H. Morkoç Doping asymmetry problem in ZnO: current status and outlook Proc IEEE 98 2010 1269 1280
8. A. Janotti, and C.G. Van de Walle Fundamentals of zinc oxide as a semiconductor Rep Prog Phys 72 2009 126501
9. J.M. Shannon, and F. Balon Source-gated thin-film transistors Solid-State Electron 52 2008 449 454
10. J.M. Larson, and J.P. Snyder Overview and status of metal S/D Schottky-barrier MOSFET technology IEEE Trans Electron Dev 53 2006 1048 1058
11. Zhang M. Modelling and fabrication of high performance Schottky-barrier SOI-MOSFETs with low effective Schottky barriers; 2006.
12. R. Jhaveri, V. Nagavarapu, and J.C. Woo Asymmetric Schottky tunneling source SOI MOSFET design for mixed-mode applications IEEE Trans Electron Dev 56 2009 93 99
13. John M. Shannon, and Frantisek Balon High-performance thin-film transistors in disordered and poor-quality semiconductors IEEE Trans Electron Dev 54 2007 354 358
14. Y.W. Sun, J. Gospodyn, P. Kursa, J. Sit, R.G. DeCorby, and Y.Y. Tsui Dense and porous ZnO thin films produced by pulsed laser deposition Appl Surf Sci 248 2005 392 396
15. K. Ip, G.T. Thaler, H. Yang, S. Youn Han, Y. Li, and D.P. Norton Contacts to ZnO J Cryst Growth 287 2006 149 156
16. L.J. Brillson, and Y. Lu ZnO Schottky barriers and Ohmic contacts J Appl Phys 109 2011 121301
17. B.J. Coppa, R.F. Davis, and R.J. Nemanich Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0 0 0 1 ̄) Appl Phys Lett 82 2003 400
18. A.Y. Polyakov, N.B. Smirnov, E.A. Kozhukhova, V.I. Vdovin, K. Ip, and Y.W. Heo Electrical characteristics of Au and Ag Schottky contacts on n-ZnO Appl Phys Lett 83 2003 1575
19. S.M. Sze, and K.K. Ng Physics of semiconductor devices 3rd ed. 2007 Wiley Hoboken
20. M.W. Allen, M.M. Alkaisi, and S.M. Durbin Metal Schottky diodes on Zn-polar and O-polar bulk ZnO Appl Phys Lett 89 2006 103520
21. C.A. Mead Metal-semiconductor surface barriers Solid-State Electron 9 1966 1023 1033
22. T. Yoshida, T. Tachibana, T. Maemoto, S. Sasa, and M. Inoue Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors Appl Phys A 101 2010 685 688
23. C.J. Kao, Y.W. Kwon, Y.W. Heo, D.P. Norton, S.J. Pearton, and F. Ren Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition J Vac Sci Technol B Microelectron Nanometer Struct 23 2005 1024 1028
24. P.-K. Shin, Y. Aya, T. Ikegami, and K. Ebihara Application of pulsed laser deposited zinc oxide films to thin film transistor device Thin Solid Films 516 2008 3767 3771
25. J.N. Zeng, J.K. Low, Z.M. Ren, T. Liew, and Y.F. Lu Effect of deposition conditions on optical and electrical properties of ZnO films prepared by pulsed laser deposition Appl Surf Sci 197-198 2002 362 367
26. J.H. Lee, C.H. Ahn, S. Hwang, C.H. Woo, J.-S. Park, and H.K. Cho Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors Thin Solid Films 519 2011 6801 6805
27. F.K. Shan, B.C. Shin, S.W. Jang, and Y.S. Yu Substrate effects of ZnO thin films prepared by PLD technique J Eur Ceram Soc 24 2004 1015 1018
28. A.O. Dikovska, P.A. Atanasov, C. Vasilev, I.G. Dimitrov, and T.R. Stoyanchov Thin ZnO films produced by pulsed laser deposition J Optoelectron Adv Mater 7 2005 1329 1334
29. H.-C. Huang, and T.-E. Hsieh Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors Nanotechnology 21 2010 295707
30. Origin. OriginLab, Northampton, MA; 2010.
31. H.-S. Wong, M.H. White, T.J. Krutsick, and R.V. Booth Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's Solid-State Electron 30 1987 953 968
32. C.T. Angelis, C.A. Dimitriadis, F.V. Farmakis, J. Brini, G. Kamarinos, and M. Miyasaka Transconductance of large grain excimer laser-annealed polycrystalline silicon thin film transistors Solid-State Electron 44 2000 1081 1087
33. S.-J. Choi, C.-J. Choi, J.-Y. Kim, M. Jang, and Y.-K. Choi Analysis of transconductance in Schottky-barrier MOSFETs IEEE Trans Electron Dev 58 2011 427 432
34. Luo J. Integration of metallic source/drain contacts in MOSFET technology; 2010.
35. L. Sun, X.Y. Liu, M. Liu, G. Du, and R.Q. Han Monte Carlo simulation of Schottky contact with direct tunnelling model Semicond Sci Technol 18 2003 576 581
36. J. Knoch, and J. Appenzeller Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors Appl Phys Lett 81 2002 3082 3084
37. J. Park, A.M. Ozbek, L. Ma, M.T. Veety, M.P. Morgensen, and D.W. Barlage An analytical model of source injection for N-type enhancement mode GaN-based Schottky source/drain MOSFET's with experimental demonstration Solid-State Electron 54 2010 1680 1685