Improved performances of metal-oxide-nitride-oxide-silicon memory with HfTiON as charge-trapping layer

Applied Physics Letters

Volumn 103, Issue 21, 2013, Pages

  Chen, J X ^a   Xu, J P ^a   Liu, L ^a   Lai, P T ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; MEMORY WINDOW; METAL OXIDE NITRIDE OXIDE SILICONS; PERFORMANCE AND RELIABILITIES; PROGRAM/ERASE; TI CONTENT;

CHARGE TRAPPING; NITRIDES; SILICATES; SILICON;

OXIDE FILMS;

EID: 84888393556     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4829880     Document Type: Article

References (29)

1. G. Wang and M. H. White, Solid-State Electron. 52, 1491 (2008). 10.1016/j.sse.2008.06.036
2. X. D. Huang, J. K. O. Sin, and P. T. Lai, IEEE Trans. Electron Devices 58, 4235 (2011). 10.1109/TED.2011.2169675
3. C. Y. Tsai and A. Chin, IEEE Trans. Electron Devices 59, 252 (2012). 10.1109/TED.2011.2171970
4. H.-W. You and W.-J. Cho, Appl. Phys. Lett. 96, 093506 (2010). 10.1063/1.3337103
5. S. Spiga, F. Driussi, A. Lamperti, G. Congedo, and O. Salicio, Appl. Phys. Express 5, 021102 (2012). 10.1143/APEX.5.021102
6. C. H. Cheng and J. Y. M. Lee, Appl. Phys. Lett. 91, 192903 (2007). 10.1063/1.2800821
7. C. Y. Tsai, T. H. Lee, C. H. Cheng, A. Chin, and H. Wang, Appl. Phys. Lett. 97, 213504 (2010). 10.1063/1.3522890
8. X. D. Huang, J. K. O. Sin, and P. T. Lai, IEEE Trans. Device Mater. Reliab. 12, 306 (2012). 10.1109/TDMR.2011.2182197
9. J. C. Wang, C. T. Lin, P. C. Chou, and C. S. Lai, Microelectron. Reliab. 52, 635 (2012). 10.1016/j.microrel.2011.09.032
10. S. H. Jeon, Electrochem. Solid-State Lett. 12, H412 (2009). 10.1149/1.3212683
11. T. Lee and S. K. Banerjee, J. Vac. Sci. Technol. B 28, 1005 (2010). 10.1116/1.3481140
12. X. D. Huang, L. Liu, J. P. Xu and P. T. Lai, Appl. Phys. Lett. 99, 112903 (2011). 10.1063/1.3639275
13. C. H. Lai, A. Chin, H. L. Kao, K. M. Chen, M. Hong, J. Kwo, and C. C. Chi, Dig. Tech. Pap.-Symp. VLSI Technol. 2006, 44. 10.1109/VLSIT.2006.1705208
14. S. H. Lina, A. Chin, F. S. Yeh, and S. P. McAlister, Tech. Dig. -Int. Electron Devices Meet. 2008, 1. 10.1109/IEDM.2008.4796829
15. X. D. Huang, P. T. Lai, and J. K. O. Sin, Microelectron. Reliab. 52, 2527 (2012). 10.1016/j.microrel.2012.04.006
16. C. Y. Tsai, T. H. Lee, and A. Chin, IEEE Electron Device Lett. 32, 381 (2011). 10.1109/LED.2010.2100019
17. L. Q. Zhu, L. D. Zhang, and Q. Fang, Appl. Phys. Lett. 91, 172902 (2007). 10.1063/1.2795331
18. C. H. Kao, H. Chen, H. W. Chang, and C. S. Chuang, J. Vac. Sci. Technol. A 29, 06B102 (2011). 10.1116/1.3653970
19. T. M. Pan, J. S. Jung, and X. C. Wu, Appl. Phys. Lett. 96, 162901 (2010). 10.1063/1.3402774
20. F.-H. Chen and T.-M. Pan, J. Electron. Mater. 41, 2197 (2012). 10.1007/s11664-012-2115-5
21. X. Gaobo and X. Qiuxia, in 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) (2008), p. 1284.
22. L. Liu, J. P. Xu, F. Ji, J. X. Chen, and P. T. Lai, Appl. Phys. Lett. 101, 133503 (2012). 10.1063/1.4754830
23. M. Liu, L. D. Zhang, G. He, X. J. Wang, and M. Fang, J. Appl. Phys. 108, 024102 (2010). 10.1063/1.3462467
24. D. K. Sarkar, E. Desbiens, and M. A. El Khakani, Appl. Phys. Lett. 80, 294 (2002). 10.1063/1.1435072
25. M. H. Jung, K. S. Kim, G. H. Park, and W. J. Cho, Appl. Phys. Lett. 94, 053508 (2009). 10.1063/1.3078279
26. H. X. Xu, J. P. Xu, C. X. Li, C. L. Chan, and P. T. Lai, Appl. Phys. A 99, 903 (2010). 10.1007/s00339-010-5665-5
27. L. Liu, J. P. Xu, F. Ji, J. X. Chen, and P. T. Lai, Appl. Phys. Lett. 101, 033501 (2012). 10.1063/1.4737158
28. G. He, Z. Q. Sun, Y. Q. Ma, M. Z. Wu, Y. M. Liu, S. W. Shi, G. Li, X. S. Chen, L. D. Zhang, and Z. B. Fang, Semicond. Sci. Technol. 26, 105019 (2011). 10.1088/0268-1242/26/10/105019
29. L. Liu, J. P. Xu, F. Ji, X. D. Huang, and P. T. Lai, IEEE Trans. Device Mater. Reliab. 11, 244 (2011). 10.1109/TDMR.2011.2117428