Gadolinium-based metal oxide for nonvolatile memory applications

Microelectronics Reliability

Volumn 52, Issue 4, 2012, Pages 635-641

  Wang, Jer Chyi ^a   Lin, Chih Ting ^a   Chou, Pai Chi ^a   Lai, Chao Sung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DIAGRAMS; BAND GAPS; CHARGE STORAGE; DISCRETE NODES; DISCRETE TRAPS; ELECTRICAL PERFORMANCE; GAS-FLOW RATIO; HIGH-K MATERIALS; MEMORY EFFECTS; METAL OXIDES; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; NONSTOICHIOMETRIC; OXIDE CHARGE; PHYSICAL MODEL; POWER RATIO; RETENTION CHARACTERISTICS; RETENTION MECHANISM; SILICON OXIDE NITRIDE OXIDE SILICONS; TRAPPING ENERGY; TRAPPING LEVELS; ULTRA-VIOLET; VISIBLE SPECTROPHOTOMETERS;

METALLIC COMPOUNDS; NITRIDES; SILICON OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

GADOLINIUM;

EID: 84857781469     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.09.032     Document Type: Review

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