Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Liu, L ^a   Xu, J P ^a   Ji, F ^a   Chen, J X ^a   Lai, P T ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING MEMORY; CYCLING ENDURANCE; DUAL CHARGE STORAGE LAYERS; INTERMIXING LAYER; POST DEPOSITION ANNEALING; ROOM TEMPERATURE; TAPERED BANDGAP; TRAP DISTRIBUTIONS;

HAFNIUM; TITANIUM NITRIDE; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL ATOMIC STRUCTURE;

EID: 84872058911     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754830     Document Type: Article

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