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Applied Physics A: Materials Science and Processing

Volumn 99, Issue 4, 2010, Pages 903-906

Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric

(5) Xu, H X a,c Xu, J P a Li, C X b Chan, C L b Lai, P T b

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b UNIVERSITY OF HONG KONG (Hong Kong)

c HUANGGANG NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PERMITTIVITIES; ELECTRICAL PROPERTY; GATE VOLTAGES; GATE-LEAKAGE; GATE-LEAKAGE CURRENT; INTERFACE STATE DENSITY; METAL-OXIDE- SEMICONDUCTORCAPACITORS; RELATIVE PERMITTIVITY; TI CONTENT; TI-INCORPORATION; ULTRA-THIN;

CAPACITANCE; CAPACITORS; FILM GROWTH; GATES (TRANSISTOR); GERMANIUM; MOS CAPACITORS; PERMITTIVITY;

GATE DIELECTRICS;

EID: 77954888579 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-5665-5 Document Type: Article

Times cited : (19)

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