Arsenic-implanted HfON charge-trapping flash memory with large memory window and good retention

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 381-383

  Tsai, C Y ^a   Lee, T H ^a   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Charge trapping Flash (CTF); HfON; ion implant; nonvolatile memory (NVM)

Indexed keywords

CHARGE-TRAPPING FLASH (CTF); CONTROL DEVICE; FLASH DEVICES; HFON; ION IMPLANT; MEMORY WINDOW; NON-VOLATILE MEMORIES; PROGRAM/ERASE; TRAPPING LAYERS;

ARSENIC; ION IMPLANTATION; SILICON COMPOUNDS; TANTALUM COMPOUNDS;

FLASH MEMORY;

EID: 79951953041     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2100019     Document Type: Article

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