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Volumn 52, Issue 10, 2008, Pages 1491-1497

Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices

Author keywords

Characterization; MANOS; Nonvolatile semiconductor memory (NVSM); Quantum mechanical tunneling; SONOS; Write erase

Indexed keywords

METALS; SEMICONDUCTOR STORAGE;

EID: 50849124092     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.036     Document Type: Article
Times cited : (17)

References (21)
  • 3
    • 33847749484 scopus 로고    scopus 로고
    • A novel NAND-type MONOS memory using 63 nm process technology for multi-gigabit flash EEPROMs
    • Shin Y., Choi J., Kang C., Lee C., Park K.-T., Lee J.-S., et al. A novel NAND-type MONOS memory using 63 nm process technology for multi-gigabit flash EEPROMs. IEDM Technical Digest (2005) 327
    • (2005) IEDM Technical Digest , pp. 327
    • Shin, Y.1    Choi, J.2    Kang, C.3    Lee, C.4    Park, K.-T.5    Lee, J.-S.6
  • 5
    • 47249140761 scopus 로고    scopus 로고
    • Integration technology of 30 nm generation multi-level NAND flash for 64 Gb NAND flash memory
    • Kwak D., Park J., Kim K., Yim Y., Ahn S., Park Y., et al. Integration technology of 30 nm generation multi-level NAND flash for 64 Gb NAND flash memory. VLSI Technology, IEEE Symposium on (2007) 12
    • (2007) VLSI Technology, IEEE Symposium on , pp. 12
    • Kwak, D.1    Park, J.2    Kim, K.3    Yim, Y.4    Ahn, S.5    Park, Y.6
  • 6
    • 0034842919 scopus 로고    scopus 로고
    • SONOS nonvolatile semiconductor memories for space and military applications
    • Adams D.A., Mavisz D., Murray J.R., and White M.H. SONOS nonvolatile semiconductor memories for space and military applications. Aerospace Conference 5 (2001) 2295
    • (2001) Aerospace Conference , vol.5 , pp. 2295
    • Adams, D.A.1    Mavisz, D.2    Murray, J.R.3    White, M.H.4
  • 7
    • 33748464557 scopus 로고    scopus 로고
    • Advancements in nanoelectronics SONOS nonvolatile semiconductor memory (NVSM) devices and technology
    • White M.H., Wang Y., Wrazien S.J., and Zhao Y. Advancements in nanoelectronics SONOS nonvolatile semiconductor memory (NVSM) devices and technology. Int J High Speed Electron Syst 16 (2006) 479
    • (2006) Int J High Speed Electron Syst , vol.16 , pp. 479
    • White, M.H.1    Wang, Y.2    Wrazien, S.J.3    Zhao, Y.4
  • 8
    • 0035872897 scopus 로고    scopus 로고
    • High-K gate dielectrics: current status and materials properties considerations
    • Wilk G.D., Wallace R.M., and Anthony J.M. High-K gate dielectrics: current status and materials properties considerations. Appl Phys Rev 89 (2001) 5243
    • (2001) Appl Phys Rev , vol.89 , pp. 5243
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 10
    • 28744456880 scopus 로고    scopus 로고
    • High-K materials for nonvolatile memory applications
    • Van Houdt J. High-K materials for nonvolatile memory applications. Reliab Phys Symp (2005) 234
    • (2005) Reliab Phys Symp , pp. 234
    • Van Houdt, J.1
  • 12
    • 0024985779 scopus 로고
    • Charge transport and storage of low programming voltage SONOS/MONOS memory devices
    • Libsch F.R., and White M.H. Charge transport and storage of low programming voltage SONOS/MONOS memory devices. Solid-State Electron 33 (1990) 105
    • (1990) Solid-State Electron , vol.33 , pp. 105
    • Libsch, F.R.1    White, M.H.2
  • 13
    • 0001439114 scopus 로고
    • Scaling of Multidielectric Nonvolatile SONOS Memory Structures
    • French M.L., and White M.H. Scaling of Multidielectric Nonvolatile SONOS Memory Structures. Solid-State Electron 37 (1994) 1913
    • (1994) Solid-State Electron , vol.37 , pp. 1913
    • French, M.L.1    White, M.H.2
  • 15
    • 24144438630 scopus 로고    scopus 로고
    • 3 with TaN metal gate for suppressing backward-tunneling effect
    • 3 with TaN metal gate for suppressing backward-tunneling effect. Appl Phys Lett 87 (2005) 073510
    • (2005) Appl Phys Lett , vol.87 , pp. 073510
    • Lee, C.-H.1    Park, K.-C.2    Kim, K.3
  • 16
    • 36149019114 scopus 로고
    • Thermionic emission, field emission, and the transition region
    • Murphy E.L., and Good R.H. Thermionic emission, field emission, and the transition region. Phys Rev 102 (1956) 1464
    • (1956) Phys Rev , vol.102 , pp. 1464
    • Murphy, E.L.1    Good, R.H.2
  • 17
    • 0015671671 scopus 로고
    • Trap-assisted charge injection in MNOS structures
    • Svensson C., and Lundstrom I. Trap-assisted charge injection in MNOS structures. J Appl Phys 44 (1973) 4657
    • (1973) J Appl Phys , vol.44 , pp. 4657
    • Svensson, C.1    Lundstrom, I.2
  • 18
    • 0025430849 scopus 로고
    • Study of thin gate oxides grown in an ultra-dry/clean-triple-wall oxidation furnace system
    • Yoon S., and White M.H. Study of thin gate oxides grown in an ultra-dry/clean-triple-wall oxidation furnace system. J Electron Mater 19 (1990) 487
    • (1990) J Electron Mater , vol.19 , pp. 487
    • Yoon, S.1    White, M.H.2
  • 19
    • 0033728046 scopus 로고    scopus 로고
    • Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures
    • Yang Y., and White M.H. Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures. Solid-State Electron 44 (2000) 949
    • (2000) Solid-State Electron , vol.44 , pp. 949
    • Yang, Y.1    White, M.H.2
  • 20
    • 0034187380 scopus 로고    scopus 로고
    • Band offsets of wide-band-gap oxides and implications for future electronic devices
    • Robertson J. Band offsets of wide-band-gap oxides and implications for future electronic devices. J Vacuum Sci Technol B: Microelectron Nanometer Struct 18 (2000) 1785
    • (2000) J Vacuum Sci Technol B: Microelectron Nanometer Struct , vol.18 , pp. 1785
    • Robertson, J.1
  • 21
    • 0025449438 scopus 로고
    • A new approach to study electron and hole charge separation at the semiconductor-insulator interface
    • Roy A., and White M.H. A new approach to study electron and hole charge separation at the semiconductor-insulator interface. IEEE Trans Electron Devices 37 (1990) 1504
    • (1990) IEEE Trans Electron Devices , vol.37 , pp. 1504
    • Roy, A.1    White, M.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.