High-performance charge-trapping flash memory device with an ultrathin 2.5-nm equivalent-Si 3N 4-thickness trapping layer

IEEE Transactions on Electron Devices

Volumn 59, Issue 1, 2012, Pages 252-254

  Tsai, C Y ^a   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Charge trapping (CT) Flash; Ge; HfON; LaAlO 3; nonvolatile memory (NVM)

Indexed keywords

CHARGE-TRAPPING (CT) FLASH; FLASH DEVICES; HFON; LAALO 3; MEMORY WINDOW; NON-VOLATILE MEMORIES; PROGRAM/ERASE; TRAPPING LAYERS; ULTRA-THIN;

CHARGE TRAPPING; GERMANIUM; LANTHANUM ALLOYS; SILICON; SILICON COMPOUNDS;

FLASH MEMORY;

EID: 84855456725     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2171970     Document Type: Article

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