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Volumn 94, Issue 5, 2009, Pages

Dependence of charge trapping and tunneling on the silicon-nitride (Si 3N4) thickness for tunnel barrier engineered nonvolatile memory applications

(4) Jung, Myung Ho a Kim, Kwan Su a Park, Goon Ho a Cho, Won Ju a

a Kwangwoon University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; TUNNELING (EXCAVATION); TUNNELS;

CHARGE TRAPS; CONSTANT CURRENT STRESS; CRITICAL THICKNESS; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATIONS; TUNNEL BARRIERS; TUNNELING CHARACTERISTICS;

CHARGE TRAPPING;

EID: 59849096053 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3078279 Document Type: Article

Times cited : (32)

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