Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

Applied Physics Letters

Volumn 97, Issue 21, 2010, Pages

  Tsai, C Y ^a   Lee, T H ^a   Cheng, C H ^a   Chin, Albert ^a   Wang, Hong ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL DEVICE; DEEP TRAPS; FLASH DEVICES; MEMORY WINDOW; NONVOLATILE MEMORY DEVICES; PROGRAM/ERASE; TRAPPING LAYERS;

ION IMPLANTATION; LANTHANUM ALLOYS; NONVOLATILE STORAGE; SILICON COMPOUNDS; TANTALUM COMPOUNDS;

CHARGE TRAPPING;

EID: 78649606728     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3522890     Document Type: Article

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