Physical and electrical properties of Dy2O3 and Dy2TiO5 metal oxide-high-κ oxide-silicon-type nonvolatile memory devices

Journal of Electronic Materials

Volumn 41, Issue 8, 2012, Pages 2197-2203

  Chen, Fa Hsyang ^a   Pan, Tung Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

centroid; charge trapping layer; Dy2O3; Dy2TiO5; Metal oxide high oxide silicon (MOHOS)

Indexed keywords

CENTROID; CHARGE CARRIER TRAPPING; COMPOSITIONAL FEATURES; CONSTANT CURRENT STRESS; FLAT-BAND VOLTAGE SHIFT; NONVOLATILE MEMORY DEVICES; PROGRAMMING VOLTAGE; TIO;

ANNEALING; C (PROGRAMMING LANGUAGE); CHARGE TRAPPING; METALLIC COMPOUNDS; NONVOLATILE STORAGE; PHOTOELECTRONS; SILICATES; SILICON; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 84885618438     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2115-5     Document Type: Article

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