Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Huang, X D ^a   Liu, L ^b   Xu, J P ^b   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP; MEMORY WINDOW; NON-VOLATILE MEMORY APPLICATION; PHYSICAL FEATURES; RETENTION PROPERTIES; TRAPPING EFFICIENCIES;

CHARGE TRAPPING; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 80053190445     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3639275     Document Type: Article

References (15)

1. X. G. Wang, J. Liu, W. P. Bai, and D. L. Kwong, IEEE Trans. Electron Devices 51, 597 (2008). 10.1109/TED.2004.824684
2. C. H. Chang and J. G. Hwu, J. Appl. Phys. 105, 094103 (2009). 10.1063/1.3120942
3. H. J. Yang, C. F. Cheng, W. B. Chen, S. H. Lin, F. S. Yeh, S. P. McAlister, and A. Chin, IEEE Trans. Electron Devices 55, 1417 (2008). 10.1109/TED.2008.920973
4. J. Y. Wu, Y. T. Chen, M. H. Lin, and T. B. Wu, IEEE Electron Device Lett. 31, 993 (2010). 10.1109/LED.2010.2052090
5. T. M. Pan and W. W. Yeh, IEEE Trans. Electron Devices 55, 2354 (2008). 10.1109/TED.2008.920030
6. Y. H. Wu, L. L. Chen, Y. S. Lin, M. Y. Li, and H. C. Wu, IEEE Electron Device Lett. 30, 1290 (2009). 10.1109/LED.2009.2022346
7. S. H. Lin, A. Chin, F. S. Yeh, and S. P. McAlister, Tech. Dig.-Int. Electron Devices Meet. 2008, 843 (2008). 10.1109/IEDM.2008.4796829
8. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
9. G. Shang, P. W. Peacock, and J. Robertson, Appl. Phys. Lett. 84, 106 (2004). 10.1063/1.1638896
10. M. Copel, N. Bojarczuk, L. F. Edge, and S. Guha, Appl. Phys. Lett. 97, 182901 (2010). 10.1063/1.3513314
11. C. X. Li and P. T. Lai, Appl. Phys. Lett. 95, 022910 (2009). 10.1063/1.3182741
12. K. Y. Tong, E. V. Jelenkovic, W. Liu, and J. Y. Dai, Microelectron. Eng. 83, 293 (2006). 10.1016/j.mee.2005.09.001
13. O. Renault, D. Samour, J. F. Damlencourt, D. Blin, F. Martin, and S. Marthon, Appl. Phys. Lett. 81, 3627 (2002). 10.1063/1.1520334
14. J. J. Chambers and G. N. Parsons, J. Appl. Phys. 90, 918 (2001). 10.1063/1.1375018
15. Z. H. Liu, P. T. Lai, and Y. C. Cheng, IEEE Trans. Electron Devices 38, 344 (1991). 10.1109/16.69916