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Volumn 91, Issue 19, 2007, Pages

Metal-high-k-high-k-oxide-semiconductor capacitors and field effect transistors using Al/La2O3/Ta2O 5/SiO2/Si structure for nonvolatile memory applications

(2) Cheng, Chih Hao a Lee, Joseph Ya Min a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; FIELD EFFECT TRANSISTORS; NONVOLATILE STORAGE; SEMICONDUCTOR DEVICES; SILICON; THRESHOLD VOLTAGE;

NONVOLATILE MEMORY APPLICATIONS; PULSE VOLTAGE; THRESHOLD VOLTAGE SHIFT;

CAPACITORS;

EID: 36049039179 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2800821 Document Type: Article

Times cited : (27)

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