메뉴 건너뛰기




Volumn 52, Issue 11, 2012, Pages 2527-2531

Performance of nonvolatile memory by using band-engineered SrTiO 3/HfON stack as charge-trapping layer

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOSS; MEMORY WINDOW; NON-VOLATILE MEMORIES; RETENTION PROPERTIES; SECONDARY ION MASS SPECTROSCOPY; SRTIO;

EID: 84867571811     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.04.006     Document Type: Article
Times cited : (4)

References (17)
  • 3
    • 34247172547 scopus 로고    scopus 로고
    • Electrical characterization of metal-oxide-high-k dielectric-oxide- semiconductor (MOHOS) structures for memory applications
    • S.U. H, and J.Y.M. Lee Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications Microeletron Reliab 47 2007 606 609
    • (2007) Microeletron Reliab , vol.47 , pp. 606-609
    • S, U.H.1    Lee, J.Y.M.2
  • 6
    • 77956171624 scopus 로고    scopus 로고
    • Ultrathin HfON trapping layer for charge-trap memory made by atomic layer deposition
    • J.Y. Wu, Y.T. Chen, M.H. Lin, and T.B. Wu Ultrathin HfON trapping layer for charge-trap memory made by atomic layer deposition IEEE Electron Dev Lett 31 2010 993 995
    • (2010) IEEE Electron Dev Lett , vol.31 , pp. 993-995
    • Wu, J.Y.1    Chen, Y.T.2    Lin, M.H.3    Wu, T.B.4
  • 7
    • 1942519858 scopus 로고    scopus 로고
    • A novel MONOS-type nonvolatile memory using high- k dielectrics for improved data retention and programming speed
    • X.G. Wang, J. Liu, W.P. Bai, and D.L. Kwong A novel MONOS-type nonvolatile memory using high- k dielectrics for improved data retention and programming speed IEEE Trans Electron Dev 51 2004 597 602
    • (2004) IEEE Trans Electron Dev , vol.51 , pp. 597-602
    • Wang, X.G.1    Liu, J.2    Bai, W.P.3    Kwong, D.L.4
  • 9
    • 79960569965 scopus 로고    scopus 로고
    • 3 as charge-trapping layer for nonvolatile memory applications
    • 3 as charge-trapping layer for nonvolatile memory applications Appl Phys Lett 98 2011 242905
    • (2011) Appl Phys Lett , vol.98 , pp. 242905
    • Huang, X.D.1    Lai, P.T.2    Liu, L.3    Xu, J.P.4
  • 11
    • 70249093601 scopus 로고    scopus 로고
    • Theraml stability and memory characteristics of HfON trapping layer for flash memory device applications
    • S.H. Jeon Theraml stability and memory characteristics of HfON trapping layer for flash memory device applications Electrochem Solid-State Lett 12 2009 H412 H415
    • (2009) Electrochem Solid-State Lett , vol.12
    • Jeon, S.H.1
  • 13
    • 31044455312 scopus 로고    scopus 로고
    • High dielectric constant gate oxides for metal oxide Si transistors
    • J. Robertsonn High dielectric constant gate oxides for metal oxide Si transistors Rep Prog Phys 69 2006 327 396
    • (2006) Rep Prog Phys , vol.69 , pp. 327-396
    • Robertsonn, J.1
  • 15
    • 2142660789 scopus 로고    scopus 로고
    • Tuning the electrical resistivity of pulsed laser deposited TiSiOx thin films from highly insulating to conductive behaviors
    • D. Brassard, D.K. Sarkar, M.A. El Khakani, and L. Ouellet Tuning the electrical resistivity of pulsed laser deposited TiSiOx thin films from highly insulating to conductive behaviors Appl Phys Lett 84 2004 2304
    • (2004) Appl Phys Lett , vol.84 , pp. 2304
    • Brassard, D.1    Sarkar, D.K.2    El Khakani, M.A.3    Ouellet, L.4
  • 16
    • 79955989915 scopus 로고    scopus 로고
    • High-k titanium silicate dielectric thin films grown by pulsed-laser deposition
    • D.K. Sarkar, E. Desbiens, and M.A. El Khakani High-k titanium silicate dielectric thin films grown by pulsed-laser deposition Appl Phys Lett 80 2002 294 296
    • (2002) Appl Phys Lett , vol.80 , pp. 294-296
    • Sarkar, D.K.1    Desbiens, E.2    El Khakani, M.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.