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Electrochemical and Solid-State Letters

Volumn 12, Issue 11, 2009, Pages

Thermal stability and memory characteristics of HfON trapping layer for flash memory device applications

(1) Jeon, Sanghun a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STATE; CHARGE TRAP FLASH MEMORIES; FLASH MEMORY DEVICES; INTERFACIAL QUALITIES; INTERFACIAL REACTIONS; THERMAL STABILITY; TRAP LEVELS; TRAPPING LAYERS;

ACTIVATION ENERGY; CHARGE TRAPPING; HAFNIUM; SEMICONDUCTING FILMS; THERMODYNAMIC STABILITY;

FLASH MEMORY;

EID: 70249093601 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3212683 Document Type: Article

Times cited : (8)

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