Effects of thermal treatments on the trapping properties of HfO 2 films for charge trap memories

Applied Physics Express

Volumn 5, Issue 2, 2012, Pages

  Spiga, Sabina ^a   Driussi, Francesco ^a   Lamperti, Alessio ^b   Congedo, Gabriele ^a   Salicio, Olivier ^a  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP; CHARGE TRAPPING PROPERTIES; DIFFUSION PHENOMENA; HIGH TEMPERATURE; INSULATING PROPERTIES; MEMORY PERFORMANCE; OXIDE THICKNESS; POST DEPOSITION ANNEALING; PROGRAMMING TRANSIENT; TRAP DENSITY; TRAPPING PROPERTIES;

CHARGE TRAPPING; SILICON COMPOUNDS;

HAFNIUM OXIDES;

EID: 84857248252     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.021102     Document Type: Article

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