Fluorinated SrTiO3 as charge-trapping layer for nonvolatile memory applications

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4235-4240

  Huang, X D ^a   Sin, Johnny K O ^b   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Charge trapping (CT) layer (CTL); fluorine treatment; high k; nonvolatile memory; SrTiO3

Indexed keywords

CHARGE-TRAPPING (CT) LAYER (CTL); DATA RETENTION; DEEP LEVEL; GATE VOLTAGES; HIGH-K; LEAKAGE PATHS; MEMORY DEVICE; MEMORY WINDOW; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; PROGRAM/ERASE; SRTIO;

FLUORINE; SILICON COMPOUNDS; STRONTIUM TITANATES;

STRONTIUM ALLOYS;

EID: 82155162321     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2169675     Document Type: Article

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