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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 5, 2010, Pages 1005-1010

Device characteristics of HfON charge-trap layer nonvolatile memory

(2) Lee, Tackhwi a Banerjee, Sanjay K a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; HAFNIUM COMPOUNDS;

AMPHOTERIC MODELS; CHARGE TRAP; DEVICE CHARACTERISTICS; DIELECTRIC CONSTANTS; FOWLER-NORDHEIM TUNNELING; MEMORY WINDOW; NITRIDED; NON-VOLATILE MEMORIES; PROGRAMMING SPEED; RETENTION TIME; TRAP DENSITY; TRAP LEVELS; TUNNELING OXIDES;

OXIDE FILMS;

EID: 77957735781 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3481140 Document Type: Article

Times cited : (9)

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