-
1
-
-
0032592096
-
Design challenges of technology scaling
-
Jul./Aug
-
S. Borkar, "Design challenges of technology scaling," IEEE Micro, vol. 19, no. 4, pp. 23-29, Jul./Aug. 1999.
-
(1999)
IEEE Micro
, vol.19
, Issue.4
, pp. 23-29
-
-
Borkar, S.1
-
2
-
-
0029359285
-
1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS
-
Aug
-
S. Mutoh, T. Douseki, Y. Matsuya, T. Aoki, S. Shigematsu, and J. Yamada, "1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS," IEEE J. Solid-State Circuits, vol. 30, no. 8, pp. 847-854, Aug. 1995.
-
(1995)
IEEE J. Solid-State Circuits
, vol.30
, Issue.8
, pp. 847-854
-
-
Mutoh, S.1
Douseki, T.2
Matsuya, Y.3
Aoki, T.4
Shigematsu, S.5
Yamada, J.6
-
3
-
-
67349228779
-
Low power and high speed multi threshold voltage interface circuits
-
May
-
S. Tawfik and V. Kursun, "Low power and high speed multi threshold voltage interface circuits," IEEE Trans. Very Large Scale Integr. Syst., vol. 17, no. 5, pp. 638-645, May 2009.
-
(2009)
IEEE Trans. Very Large Scale Integr. Syst.
, vol.17
, Issue.5
, pp. 638-645
-
-
Tawfik, S.1
Kursun, V.2
-
4
-
-
0034878684
-
Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs
-
A. Keshavarzi, S. Ma, S. Narendra, B. Bloechel, K. Mistry, T. Ghani, S. Borkar, and V. De, "Effectiveness of reverse body bias for leakage control in scaled dual VTCMOS ICS," in Proc. IEEE Int. Symp. Low Power Electron. Design, 2001, pp. 207-212. (Pubitemid 32806559)
-
(2001)
Proceedings of the International Symposium on Low Power Electronics and Design, Digest of Technical Papers
, pp. 207-212
-
-
Keshavarzi, A.1
Ma, S.2
Narendra, S.3
Bloechel, B.4
Mistry, K.5
Ghani, T.6
Borkar, S.7
De, V.8
-
5
-
-
0242720765
-
Dynamic sleep transistor and body bias for active leakage power control of microprocessors
-
Nov
-
J. Tschanz, S. Narendra, Y. Ye, B. Bloechel, S. Borkar, and V. De, "Dynamic sleep transistor and body bias for active leakage power control of microprocessors," IEEE J. Solid-State Circuits, vol. 38, no. 11, pp. 1838-1845, Nov. 2003.
-
(2003)
IEEE J. Solid-State Circuits
, vol.38
, Issue.11
, pp. 1838-1845
-
-
Tschanz, J.1
Narendra, S.2
Ye, Y.3
Bloechel, B.4
Borkar, S.5
De, V.6
-
6
-
-
16244409255
-
Microarchitectural techniques for power gating of execution units
-
2.2, Proceedings of the 2004 International Symposium on Lower Power Electronics and Design, ISLPED'04
-
Z. Hu, A. Buyuktosunoglu, V. Srinivasan, V. Zyuban, H. Jacobson, and P. Bose, "Microarchitectural techniques for power gating of execution units," in Proc. Assoc. Comput. Mach. Int. Symp. Low power Electron. Design, 2004, pp. 32-37. (Pubitemid 40454678)
-
(2004)
Proceedings of the 2004 International Symposium on Lower Power Electronics and Design, ISLPED'04
, pp. 32-37
-
-
Hu, Z.1
Buyuktosunoglu, A.2
Srinivasan, V.3
Zyuban, V.4
Jacobson, H.5
Bose, P.6
-
7
-
-
33748557768
-
Benefits and costs of power-gating technique
-
DOI 10.1109/ICCD.2005.34, 1524207, Proceedings - 2005 IEEE International Conference on Computer Design: VLSI in Computers and Processors, ICCD 2005
-
H. Jiang, M. Marek-Sadowska, and S. Nassif, "Benefits and costs of power-gating technique," in Proc. IEEE Int. Conf. Comput. Design: Very Large Scale Integr. Comput. Process., 2005, pp. 559-566. (Pubitemid 44362444)
-
(2005)
Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors
, vol.2005
, pp. 559-566
-
-
Jiang, H.1
Marek-Sadowska, M.2
Nassif, S.R.3
-
8
-
-
73249137734
-
A 300 mV 494 GOPS/W reconfigurable dual-supply 4-way SIMD vector processing accelerator in 45 nm CMOS
-
Jan
-
H. Kaul, M. Anders, S. Mathew, S. Hsu, A. Agarwal, R. Krishnamurthy, and S. Borkar, "A 300 mV 494 GOPS/W reconfigurable dual-supply 4-way SIMD vector processing accelerator in 45 nm CMOS," IEEE J. Solid-State Circuits, vol. 45, no. 1, pp. 95-102, Jan. 2010.
-
(2010)
IEEE J. Solid-State Circuits
, vol.45
, Issue.1
, pp. 95-102
-
-
Kaul, H.1
Anders, M.2
Mathew, S.3
Hsu, S.4
Agarwal, A.5
Krishnamurthy, R.6
Borkar, S.7
-
9
-
-
20244387716
-
4-Mb MOSFET-selected phase-change memory experimental chip
-
ESSCIRC 2004 - Proceedings of the 30th European Solid-State Circuits Conference
-
F. Bedeschi, R. Bez, C. Boffino, E. Bonizzoni, E. Buda, G. Casagrande, L. Costa, M. Ferraro, R. Gastaldi, O. Khouri, F. Ottogalli, F. Pellizzer, A. Pirovano, C. Resta, G. Torelli, and M. Tosi, "4-MB MOSFET-selected phase-change memory experimental chip," in Proc. IEEE 30th Eur. Solid-State Circuits Conf., 2004, pp. 207-210. (Pubitemid 40566403)
-
(2004)
ESSCIRC 2004 - Proceedings of the 30th European Solid-State Circuits Conference
, pp. 207-210
-
-
Bedeschi, F.1
Bez, R.2
Boffino, C.3
Bonizzoni, E.4
Buda, E.5
Casagrande, G.6
Costa, L.7
Ferraro, M.8
Gastaldi, R.9
Khouri, O.10
Ottogalli, F.11
Pellizzer, F.12
Pirovano, A.13
Resta, C.14
Torelli, G.15
Tosi, M.16
-
10
-
-
77949611974
-
Phase-change technology and the future of main memory
-
Jan./Feb
-
B. C. Lee, P. Zhou, J. Yang, Y. Zhang, B. Zhao, E. Ipek, O. Mutlu, and D. Burger, "Phase-change technology and the future of main memory," IEEE Micro, vol. 30, no. 1, pp. 143-143, Jan./Feb. 2010.
-
(2010)
IEEE Micro
, vol.30
, Issue.1
, pp. 143-143
-
-
Lee, B.C.1
Zhou, P.2
Yang, J.3
Zhang, Y.4
Zhao, B.5
Ipek, E.6
Mutlu, O.7
Burger, D.8
-
11
-
-
38349103053
-
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
-
W.-Y. Chang, Y.-C. Lai, T.-B. Wu, S.-F. Wang, F. Chen, and M.-J. Tsai, "Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications," Appl. Phys. Lett., vol. 92, no. 2, pp. 022 110-022 110, 2008.
-
(2008)
Appl. Phys. Lett.
, vol.92
, Issue.2
, pp. 110
-
-
Chang, W.-Y.1
Lai, Y.-C.2
Wu, T.-B.3
Wang, S.-F.4
Chen, F.5
Tsai, M.-J.6
-
12
-
-
77957863654
-
Novel ultra-low power RRAM with good endurance and retention
-
C. Cheng, A. Chin, and F. Yeh, "Novel ultra-low power RRAM with good endurance and retention," in Proc. IEEE Symp. Very Large Scale Integr. Technol., 2010, pp. 85-86.
-
(2010)
Proc. IEEE Symp. Very Large Scale Integr. Technol.
, pp. 85-86
-
-
Cheng, C.1
Chin, A.2
Yeh, F.3
-
13
-
-
71049148092
-
Spin-transfer torque MRAM (STT-MRAM): Challenges and prospects
-
Y. Huai, "Spin-transfer torque MRAM (STT-MRAM): Challenges and prospects," AAPPS Bull., vol. 18, no. 6, pp. 33-40, 2008.
-
(2008)
AAPPS Bull.
, vol.18
, Issue.6
, pp. 33-40
-
-
Huai, Y.1
-
14
-
-
64549154395
-
Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM
-
T. Kishi, H. Yoda, T. Kai, T. Nagase, E. Kitagawa, M. Yoshikawa, K. Nishiyama, T. Daibou, M. Nagamine, M. Amano, S. Takahashi, M. Nakayama, N. Shimomura, H. Aikawa, S. Ikegawa, S. Yuasa, K. Yakushiji, H. Kubota, A. Fukushima, M. Oogane, T. Miyazaki, and K. Ando, "Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM," in Proc. IEEE Int. Electron Devices Meeting, 2008, pp. 1-4.
-
(2008)
Proc. IEEE Int. Electron Devices Meeting
, pp. 1-4
-
-
Kishi, T.1
Yoda, H.2
Kai, T.3
Nagase, T.4
Kitagawa, E.5
Yoshikawa, M.6
Nishiyama, K.7
Daibou, T.8
Nagamine, M.9
Amano, M.10
Takahashi, S.11
Nakayama, M.12
Shimomura, N.13
Aikawa, H.14
Ikegawa, S.15
Yuasa, S.16
Yakushiji, K.17
Kubota, H.18
Fukushima, A.19
Oogane, M.20
Miyazaki, T.21
Ando, K.22
more..
-
15
-
-
77952215289
-
Negative-resistance read and write schemes for STT-MRAM in 0.13 μm CMOS
-
D. Halupka, S. Huda, W. Song, A. Sheikholeslami, K. Tsunoda, C. Yoshida, and M. Aoki, "Negative-resistance read and write schemes for STT-MRAM in 0.13 μm CMOS," in Proc. IEEE Int. Solid-State Circuits Conf., 2010, pp. 256-257.
-
(2010)
Proc. IEEE Int. Solid-State Circuits Conf.
, pp. 256-257
-
-
Halupka, D.1
Huda, S.2
Song, W.3
Sheikholeslami, A.4
Tsunoda, K.5
Yoshida, C.6
Aoki, M.7
-
16
-
-
77952335510
-
45 nm low power CMOS logic compatible embedded STTMRAM utilizing a reverse-connection 1 t/1 MTJ cell
-
C. J. Lin, S. H. Kang, Y. J. Wang, K. Lee, X. Zhu, W. C. Chen, X. Li, W. N. Hsu, Y. C. Kao, M. T. Liu, W. C. Chen, L. Y. Ching, M. Nowak, N. Yu, and T. Luan, "45 nm low power CMOS logic compatible embedded STTMRAM utilizing a reverse-connection 1 t/1 MTJ cell," in Proc. IEEE Int. Electron Devices Meet., 2009, pp. 1-4.
-
(2009)
Proc. IEEE Int. Electron Devices Meet.
, pp. 1-4
-
-
Lin, C.J.1
Kang, S.H.2
Wang, Y.J.3
Lee, K.4
Zhu, X.5
Chen, W.C.6
Li, X.7
Hsu, W.N.8
Kao, Y.C.9
Liu, M.T.10
Chen, W.C.11
Ching, L.Y.12
Nowak, M.13
Yu, N.14
Luan, T.15
-
17
-
-
54549095819
-
New nonvolatile logic based on spin-MTJ
-
W. Zhao, E. Belhaire, C. Chappert, F. Jacquet, and P. Mazoyer, "New nonvolatile logic based on spin-MTJ," Physica Status Solidi (a), vol. 205, no. 6, pp. 1373-1377, 2008.
-
(2008)
Physica Status Solidi (A)
, vol.205
, Issue.6
, pp. 1373-1377
-
-
Zhao, W.1
Belhaire, E.2
Chappert, C.3
Jacquet, F.4
Mazoyer, P.5
-
18
-
-
68549087135
-
Nonvolatile magnetic flip-flop for standby-power-free SoC's
-
Aug
-
N. Sakimura, T. Sugibayashi, R. Nebashi, and N. Kasai, "Nonvolatile magnetic flip-flop for standby-power-free SoC's," IEEE J. Solid-State Circuits, vol. 44, no. 8, pp. 2244-2250, Aug. 2009.
-
(2009)
IEEE J. Solid-State Circuits
, vol.44
, Issue.8
, pp. 2244-2250
-
-
Sakimura, N.1
Sugibayashi, T.2
Nebashi, R.3
Kasai, N.4
-
19
-
-
65249091008
-
Nonvolatile static random access memory based on spin-transistor architecture
-
Y. Shuto, S. Yamamoto, and S. Sugahara, "Nonvolatile static random access memory based on spin-transistor architecture," J. Appl. Phys., vol. 105, no. 7, pp. 07C933-1-07C933-3, 2009.
-
(2009)
J. Appl. Phys.
, vol.105
, Issue.7
, pp. 1-3
-
-
Shuto, Y.1
Yamamoto, S.2
Sugahara, S.3
-
20
-
-
80455129503
-
A 1.0 v 45 nm nonvolatile magnetic latch design and its robustness analysis
-
P. Wang, X. Chen, Y. Chen, H. Li, S. Kang, X. Zhu, and W. Wu, "A 1.0 V 45 nm nonvolatile magnetic latch design and its robustness analysis," in Proc. IEEE Custom Integr. Circuits Conf., 2011, pp. 1-4.
-
(2011)
Proc. IEEE Custom Integr. Circuits Conf.
, pp. 1-4
-
-
Wang, P.1
Chen, X.2
Chen, Y.3
Li, H.4
Kang, S.5
Zhu, X.6
Wu, W.7
-
21
-
-
84899425854
-
An MTJ-based nonvolatile flip-flop for high-performance SoC
-
Y. Jung, J. Kim, K. Ryu, J. Kim, S. Kang, and S. Jung, "An MTJ-based nonvolatile flip-flop for high-performance SoC," Int. J. Circuit Theory Appl., pp. 1-13, 2012.
-
(2012)
Int. J. Circuit Theory Appl.
, pp. 1-13
-
-
Jung, Y.1
Kim, J.2
Ryu, K.3
Kim, J.4
Kang, S.5
Jung, S.6
-
22
-
-
84866564548
-
Restructuring of memory hierarchy in computing system with spintronics-based technologies
-
T. Endoh, T. Ohsawa, H. Koike, T. Hanyu, and H. Ohno, "Restructuring of memory hierarchy in computing system with spintronics-based technologies," in Proc. IEEE Symp. Very Large Scale Integr. Technol., 2012, pp. 89-90.
-
(2012)
Proc. IEEE Symp. Very Large Scale Integr. Technol.
, pp. 89-90
-
-
Endoh, T.1
Ohsawa, T.2
Koike, H.3
Hanyu, T.4
Ohno, H.5
-
23
-
-
80052660750
-
A 45 nm 1 Mb embedded STT-MRAM with design techniques to minimize read-disturbance
-
J. P. Kim, T. Kim, W. Hao, H. M. Rao, K. Lee, X. Zhu, X. Li, W. Hsu, S. Kang, N. Matt, and N. Yu, "A 45 nm 1 Mb embedded STT-MRAM with design techniques to minimize read-disturbance," in Proc. IEEE Symp. Very Large Scale Integr. Circuits, 2011, pp. 296-297.
-
(2011)
Proc. IEEE Symp. Very Large Scale Integr. Circuits
, pp. 296-297
-
-
Kim, J.P.1
Kim, T.2
Hao, W.3
Rao, H.M.4
Lee, K.5
Zhu, X.6
Li, X.7
Hsu, W.8
Kang, S.9
Matt, N.10
Yu, N.11
-
24
-
-
34247155811
-
Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory
-
Z. Diao, Z. Li, S. Wang, Y. Ding, A. Panchula, E. Chen, L. Wang, and Y. Huai, "Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory," J. Phys.: Cond. Matter, vol. 19, pp. 1-13, 2007.
-
(2007)
J. Phys.: Cond. Matter
, vol.19
, pp. 1-13
-
-
Diao, Z.1
Li, Z.2
Wang, S.3
Ding, Y.4
Panchula, A.5
Chen, E.6
Wang, L.7
Huai, Y.8
-
25
-
-
77952417136
-
Design space and scalability exploration of 1 t-1 STT MTJ memory arrays in the presence of variability and disturbances
-
A. Raychowdhury, D. Somasekhar, T. Karnik, and V. De, "Design space and scalability exploration of 1 t-1 STT MTJ memory arrays in the presence of variability and disturbances," in Proc. IEEE Int. Electron Devices Meet., 2009, pp. 1-4.
-
(2009)
Proc. IEEE Int. Electron Devices Meet.
, pp. 1-4
-
-
Raychowdhury, A.1
Somasekhar, D.2
Karnik, T.3
De, V.4
-
26
-
-
0033706197
-
A survey of design techniques for system-level dynamic power management
-
Jun
-
L. Benini, A. Bogliolo, and G. De Micheli, "A survey of design techniques for system-level dynamic power management," IEEE Trans. Very Large Scale Integr. Syst., vol. 8, no. 3, pp. 299-316, Jun. 2000.
-
(2000)
IEEE Trans. Very Large Scale Integr. Syst.
, vol.8
, Issue.3
, pp. 299-316
-
-
Benini, L.1
Bogliolo, A.2
De Micheli, G.3
-
27
-
-
0033726476
-
Glitch power minimization by selective gate freezing
-
Jun
-
L. Benini, G. De Micheli, A. Macii, E. Macii, M. Poncino, and R. Scarsi, "Glitch power minimization by selective gate freezing," IEEE Trans. Very Large Scale Integr. Syst., vol. 8, no. 3, pp. 287-298, Jun. 2000.
-
(2000)
IEEE Trans. Very Large Scale Integr. Syst.
, vol.8
, Issue.3
, pp. 287-298
-
-
Benini, L.1
De Micheli, G.2
MacIi, A.3
MacIi, E.4
Poncino, M.5
Scarsi, R.6
-
28
-
-
77958043152
-
Power gating: Circuits, design methodologies, and best practice for standard-cell VLSI designs
-
Y. Shin, J. Seomun, K. Choi, and T. Sakurai, "Power gating: Circuits, design methodologies, and best practice for standard-cell VLSI designs," Assoc. Comput. Mach. Trans. Design Autom. Electron. Syst., vol. 15, no. 4, pp. 28-1-28-37, 2010.
-
(2010)
Assoc. Comput. Mach. Trans. Design Autom. Electron. Syst.
, vol.15
, Issue.4
, pp. 1-37
-
-
Shin, Y.1
Seomun, J.2
Choi, K.3
Sakurai, T.4
-
29
-
-
0031122158
-
CMOS scaling into the nanometer regime
-
Apr
-
Y. Taur, D. A. Buchanan, W. Chen, D. J. Frank, K. E. Ismail, S.-H. Lo, G. A. Sai-Halasz, R. G. Viswanathan, H.-J. C. Wann, S. J. Wind, and H.-S. Wong, "CMOS scaling into the nanometer regime," Proc. IEEE, vol. 85, no. 4, pp. 486-504, Apr. 1997.
-
(1997)
Proc. IEEE
, vol.85
, Issue.4
, pp. 486-504
-
-
Taur, Y.1
Buchanan, D.A.2
Chen, W.3
Frank, D.J.4
Ismail, K.E.5
Lo, S.-H.6
Sai-Halasz, G.A.7
Viswanathan, R.G.8
Wann, H.-J.C.9
Wind, S.J.10
Wong, H.-S.11
-
31
-
-
84883472319
-
Evaluation of hybrid MRAM/CMOS cells for reconfigurable computing
-
L. Torres, R. M. Brum, Y. Guillemenet, G. Sassatelli, and L. V. Cargnini, "Evaluation of hybrid MRAM/CMOS cells for reconfigurable computing," in Proc. IEEE 11th Int. New Circuits Syst. Conf., 2013, pp. 1-6.
-
(2013)
Proc. IEEE 11th Int. New Circuits Syst. Conf.
, pp. 1-6
-
-
Torres, L.1
Brum, R.M.2
Guillemenet, Y.3
Sassatelli, G.4
Cargnini, L.V.5
-
32
-
-
71049163454
-
SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation
-
K. Ono, T. Kawahara, R. Takemura, K. Miura, M. Yamanouchi, J. Hayakawa, K. Ito, H. Takahashi, H. Matsuoka, S. Ikeda, and H. Ohno, "SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation," in Proc. Symp. Very Large Scale Integr. Technol., 2009, pp. 228-229.
-
(2009)
Proc. Symp. Very Large Scale Integr. Technol.
, pp. 228-229
-
-
Ono, K.1
Kawahara, T.2
Takemura, R.3
Miura, K.4
Yamanouchi, M.5
Hayakawa, J.6
Ito, K.7
Takahashi, H.8
Matsuoka, H.9
Ikeda, S.10
Ohno, H.11
|