-
1
-
-
0034431976
-
Nonvolatile, high density, high performance phase-change memory
-
March
-
S. Tyson, G. Wicker, T. Lowrey, S. Hudgens, and K. Hunt, "Nonvolatile, high density, high performance phase-change memory", Proc. 2000 IEEE Aerospace Conference, vol. 5, pp. 385-390, March 2000.
-
(2000)
Proc. 2000 IEEE Aerospace Conference
, vol.5
, pp. 385-390
-
-
Tyson, S.1
Wicker, G.2
Lowrey, T.3
Hudgens, S.4
Hunt, K.5
-
2
-
-
0036110780
-
Ovonic Unified Memory - A high performance nonvolatile memory technology for stand-alone memory and embedded applications
-
Feb.
-
M. Gill, T. Lowrey, and J. Park, "Ovonic Unified Memory - A high performance nonvolatile memory technology for stand-alone memory and embedded applications", 2002 IEEE Solid-State Circuits Conference Dig, Tech. Pap., vol.1, pp. 458-459, Feb. 2002.
-
(2002)
2002 IEEE Solid-state Circuits Conference Dig, Tech. Pap.
, vol.1
, pp. 458-459
-
-
Gill, M.1
Lowrey, T.2
Park, J.3
-
3
-
-
2442666411
-
A 0.18 μn 3.0 V 64Mb non-volatile phase-transition random-access memory (PRAM)
-
Feb.
-
W. Y. Cho, B.-H. Cho, B.-G. Choi, H.-R. Oh, S.-B. Kang, K.-S. Kim, K.-H. Kim, D.-E.Kim, C.-K. Kwak, H.-G. Byun, Y.-N. Hwang, S.-J. Ahn, G.-T. Jung, H.-S. Jung, and K. Kim, "A 0.18 μn 3.0 V 64Mb non-volatile phase-transition random-access memory (PRAM)", 2004 IEEE SolidState Circuits Conference Dig. Tech. Pap., vol. 47, pp. 40-41, Feb. 2004.
-
(2004)
2004 IEEE SolidState Circuits Conference Dig. Tech. Pap.
, vol.47
, pp. 40-41
-
-
Cho, W.Y.1
Cho, B.-H.2
Choi, B.-G.3
Oh, H.-R.4
Kang, S.-B.5
Kim, K.-S.6
Kim, K.-H.7
Kim, D.-E.8
Kwak, C.-K.9
Byun, H.-G.10
Hwang, Y.-N.11
Ahn, S.-J.12
Jung, G.-T.13
Jung, H.-S.14
Kim, K.15
-
4
-
-
4544229593
-
Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications
-
to appear
-
F. Pellizzer, A. Pirovano, F. Ottogalli, M. Magistretti, M. Scaravaggi, P. Zuliani, M. Tosi, A. Benvenuti, P. Besana, S. Cadeo, T. Marangon, R. Piva, A. Spandre, R. Zonca, A. Modelli, E. Varesi, T. Lowrey, A. Lacaita, G. Casagrande, P. Cappelletti, and R. Bez, "Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications", to appear in Proc. 2004 Symposium on VLSI Technology.
-
Proc. 2004 Symposium on VLSI Technology
-
-
Pellizzer, F.1
Pirovano, A.2
Ottogalli, F.3
Magistretti, M.4
Scaravaggi, M.5
Zuliani, P.6
Tosi, M.7
Benvenuti, A.8
Besana, P.9
Cadeo, S.10
Marangon, T.11
Piva, R.12
Spandre, A.13
Zonca, R.14
Modelli, A.15
Varesi, E.16
Lowrey, T.17
Lacaita, A.18
Casagrande, G.19
Cappelletti, P.20
Bez, R.21
more..
-
5
-
-
0020844527
-
An improved method for programming a word-erasable EEPROM
-
Nov./Dec.
-
G. Torelli and P. Lupi, "An improved method for programming a word-erasable EEPROM", Alta Frequenza, vol. LII, pp. 487-494, Nov./Dec. 1983.
-
(1983)
Alta Frequenza
, vol.52
, pp. 487-494
-
-
Torelli, G.1
Lupi, P.2
-
6
-
-
0024752312
-
A 90-ns one million erase/program cycle 1-Mbit flash memory
-
Oct.
-
V. N. Kynett, M. L. Fandrich, J. Anderson, P. Dix, O. Jungroth, J. A. Kreifels, R. A. Lodenquai, B. Vajdic, S. Wells, M. D. Winston, and L. Yang, "A 90-ns one million erase/program cycle 1-Mbit Flash memory", IEEE Journal of Solid-State Circuits, vol. 24, no. 5, pp. 1259-1264, Oct. 1989.
-
(1989)
IEEE Journal of Solid-state Circuits
, vol.24
, Issue.5
, pp. 1259-1264
-
-
Kynett, V.N.1
Fandrich, M.L.2
Anderson, J.3
Dix, P.4
Jungroth, O.5
Kreifels, J.A.6
Lodenquai, R.A.7
Vajdic, B.8
Wells, S.9
Winston, M.D.10
Yang, L.11
-
7
-
-
0031698077
-
Low-voltage, low quiescent current, low drop-out regulator
-
Jan.
-
G. A. Rincon-Mora and P. E, Allen, "Low-voltage, low quiescent current, low drop-out regulator", IEEE Journal of Solid-State Circuits, vol. 33, no. 1, 36-44, Jan. 1998.
-
(1998)
IEEE Journal of Solid-state Circuits
, vol.33
, Issue.1
, pp. 36-44
-
-
Rincon-Mora, G.A.1
Allen, P.E.2
-
8
-
-
0035942669
-
Improved voltage tripler structure with symmetrical stacking charge pump
-
May
-
M. Zhang, N. Llaser, and F. Devos, "Improved voltage tripler structure with symmetrical stacking charge pump", Electronics Letters, vol. 37, pp. 668-669, May 2001.
-
(2001)
Electronics Letters
, vol.37
, pp. 668-669
-
-
Zhang, M.1
Llaser, N.2
Devos, F.3
-
9
-
-
4344670307
-
A fully symmetrical sense amplifier for non-volatile memories
-
to appear
-
F. Bedeschi, E. Bonizzoni, O. Khouri, C. Resta, and G. Torelli, "A fully symmetrical sense amplifier for non-volatile memories", to appear in Proc. 2004 IEEE International Symposium on Circuits and Systems.
-
Proc. 2004 IEEE International Symposium on Circuits and Systems
-
-
Bedeschi, F.1
Bonizzoni, E.2
Khouri, O.3
Resta, C.4
Torelli, G.5
|