SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 228-229

  Ono, K ^a   Kawahara, T ^a   Takemura, R ^a   Miura, K ^a   Yamanouchi, M ^a   Hayakawa, J ^a   Ito, K ^a   Takahashi, H ^a   Matsuoka, H ^a   Ikeda, S ^b   Ohno, H ^b  

^a HITACHI LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; EFFECT OF TEMPERATURE; HIGH COERCIVITY; HIGH TEMPERATURE; MAGNETIC TUNNEL JUNCTION; ON CURRENTS; RECORDING LAYERS; SPIN TRANSFER TORQUE; STABLE STATE; THERMAL STABILITY;

ASPECT RATIO; MAGNETIC DEVICES; SEMICONDUCTOR JUNCTIONS; THERMODYNAMIC STABILITY; TUNNEL JUNCTIONS;

THERMAL EFFECTS;

EID: 71049163454     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. K. Miura, et al., VLSI Tech. Dig., 2007, p. 234.
2. T. Kawahara, et al., JSSC 43, 2008, p. 109.
3. J. Hayakawa et al., IEEE Trans. on Mag. 44, 2008, p. 1962.
4. J. M. Lee et al., J. Appl. Phys. 101, 2007, p. 09A505.
5. C. H. Shang, et al., Phys. Rev. B 58, 1998, p. R2917.