Nonvolatile static random access memory based on spin-transistor architecture

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Shuto, Yusuke ^a,b   Yamamoto, Shuu'Ichirou ^a,b   Sugahara, Satoshi ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC TUNNEL JUNCTIONS; MAGNETO-RESISTIVE RANDOM ACCESS MEMORIES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS FETS; NONVOLATILE; SPIN TRANSISTORS; SRAM CELLS; STATIC RANDOM ACCESS MEMORIES; STORAGE NODES; TRANSISTOR ARCHITECTURES;

FIELD EFFECT TRANSISTORS; HEAT RADIATION; MAGNETIC DEVICES; MOS DEVICES; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; STATIC RANDOM ACCESS STORAGE; TUNNEL JUNCTIONS; WAVEGUIDE JUNCTIONS;

MOSFET DEVICES;

EID: 65249091008     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3076895     Document Type: Article

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