New non-volatile logic based on spin-MTJ

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 6, 2008, Pages 1373-1377

  Zhao, Weisheng ^a   Belhaire, Eric ^a,b   Chappert, Claude ^a,b   Jacquet, François ^c   Mazoyer, Pascale ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CNRS   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

90NM CMOS; CMOS CIRCUITS; CMOS LOGIC CIRCUITS; CMOS MEMORIES; CMOS TECHNOLOGIES; CMOS TRANSISTORS; COMMERCIAL APPLICATIONS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DATA DISTURBANCES; DESIGN TECHNIQUES; HITACHI; MAGNETIC TUNNEL JUNCTIONS; MOORE'S LAWS; NANODEVICES; POWER CONSUMPTIONS; RESEARCH AND DEVELOPMENTS; RESISTANCE VALUES; SPIN TRANSFERS; STMICROELECTRONICS; SWITCHING ENERGIES; TRANSISTOR LEAKAGES;

CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; ENERGY DISSIPATION; ENGINEERING RESEARCH; LEAKAGE CURRENTS; LOGIC DESIGN; MAGNETIC DEVICES; METALLIC COMPOUNDS; MOS DEVICES; NANOSTRUCTURED MATERIALS; NETWORKS (CIRCUITS); SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SPIN DYNAMICS; SWITCHING CIRCUITS; SWITCHING THEORY; TECHNOLOGY; TRANSISTORS; TUNNEL JUNCTIONS; WAVEGUIDE JUNCTIONS;

LOGIC CIRCUITS;

EID: 54549095819     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778135     Document Type: Conference Paper

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