Metalorganic chemical vapor deposition of lanthanum aluminate thin films for gate dielectrics

Ferroelectrics

Volumn 329, Issue , 2005, Pages 73-77

  Li, A D ^a   Cheng, J B ^a   Shao, Q Y ^a   Ling, H Q ^a   Wu, D ^a   Wang, Y ^a   Wang, M ^a   Liu, Z G ^a   Ming, N B ^a   Wang, C ^b   Zhou, H W ^b   Nguyen, B Y ^b  

^a NANJING UNIVERSITY   (China)

^b MOTOROLA INC   (United States)

Author keywords

Equivalent oxide thickness; Gate dielectric; LaAlO3 film; MOCVD

Indexed keywords

BAND STRUCTURE; FIELD EFFECT TRANSISTORS; LANTHANUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; THERMODYNAMIC STABILITY;

AMORPHOUS LANTHANUM ALUMINATE (LAO); GATE DIELECTRICS; LANTHANUM ALUMINATE; NONCRYSTALLINE STRUCTURE;

THIN FILMS;

EID: 33751292214     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190500315558     Document Type: Article

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