Heteroepitaxial growth of LaAlO3 films on Si (1 0 0) by laser molecular beam epitaxy

Journal of Crystal Growth

Volumn 271, Issue 1-2, 2004, Pages 165-170

  Xiang, W F ^a   Lu, H B ^a   Chen, Z H ^a   Lu, X B ^b   He, M ^a   Tian, H ^a   Zhou, Y L ^a   Li, C R ^a   Ma, X L ^c  

^a INSTITUTE OF PHYSICS   (China)

^b PEKING UNIVERSITY   (China)

^c INSTITUTE OF METAL RESEARCH   (China)

Author keywords

A1. Annealing; A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Epitaxial growth; A3. Laser molecular beam epitaxy; B1. LaAlO 3 film

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COMPUTER CONTROL; CRYSTAL STRUCTURE; CRYSTALLIZATION; FILM GROWTH; LANTHANUM COMPOUNDS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BUFFER LAYERS; CRYSTAL QUALITY; HETEROEPITAXIAL GROWTH; LASER MOLECULAR BEAM EPITAXY (LMBE);

MOLECULAR BEAM EPITAXY;

EID: 4944246197     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.057     Document Type: Article

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