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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 A, 2004, Pages 7576-7578

A study on the lanthanum aluminate thin film as a gate dielectric material

Author keywords

Aluminum oxide; Dielectric constant; Electrical and structural properties; High k; Interfacial layer; Lanthanum aluminate; Leakage current density; MOCVD

Indexed keywords

ALUMINA; ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; STRUCTURE (COMPOSITION);

ALUMINUM OXIDE; ELECTRICAL AND STRUCTURAL PROPERTIES; HIGH-Κ DIELECTRICS; INTERFACIAL LAYERS; LANTHANUM ALUMINATE (LAO); LEAKAGE CURRENT DENSITY;

THIN FILMS;

EID: 11144237446 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.7576 Document Type: Article

Times cited : (3)

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