LaAlO 3/SrTiO 3 epitaxial heterostructures by atomic layer deposition

Journal of Electronic Materials

Volumn 41, Issue 5, 2012, Pages 819-823

  Sbrockey, Nick M ^a   Luong, Michael ^a   Gallo, Eric M ^b   Sloppy, Jennifer D ^b   Chen, Guannan ^b   Winkler, Christopher R ^b   Johnson, Stephanie H ^b   Taheri, Mitra L ^b   Tompa, Gary S ^a   Spanier, Jonathan E ^b  

^a STRUCTURED MATERIALS INDUSTRIES INC   (United States)

^b Drexel University   (United States)

Author keywords

ALD; Epitaxial; Heterostructures; LaAlO 3; SrTiO 3

Indexed keywords

ALD; CURRENT VOLTAGE; DIRECT-CURRENT; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONDUCTIVITY; EPITAXIAL; FILM COMPOSITION; LAALO 3; ROOM TEMPERATURE; SRTIO; TIO; TRIMETHYL ALUMINUMS; UNIT CELLS;

ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ELECTRIC CONDUCTIVITY; EPITAXIAL FILMS; HETEROJUNCTIONS; STRONTIUM TITANATES; TITANIUM DIOXIDE;

LANTHANUM ALLOYS;

EID: 84862813663     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-1960-6     Document Type: Article

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