Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

Thin Solid Films

Volumn 520, Issue 4, 2011, Pages 1246-1250

  Liu, Kou Chen ^a   Tzeng, Wen Hsien ^b   Chang, Kow Ming ^b,c   Huang, Jiun Jie ^b   Lee, Yun Ju ^d   Yeh, Ping Hung ^d   Chen, Pang Shiu ^e   Lee, Heng Yuan ^f   Chen, Frederick ^f   Tsai, Ming Jinn ^f  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c I SHOU UNIVERSITY   (Taiwan)

^d TAMKANG UNIVERSITY   (Taiwan)

^e MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^f INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

LaAlO3; Lanthanum aluminate; Oxygen partial pressure; Pulsed laser deposition; Resistive switching; Switching memory

Indexed keywords

APPLIED BIAS; GROWTH MECHANISMS; HIGH-K DIELECTRIC; INDIUM TIN OXIDE; INTERFACIAL LAYER; LAALO3; LANTHANUM ALUMINATE; OXYGEN CONCENTRATIONS; OXYGEN IONS; OXYGEN PARTIAL PRESSURE; OXYGEN RESERVOIR; RESISTIVE SWITCHING; SWITCHING MECHANISM; THIN-FILM PROPERTIES;

DEPOSITION; ELECTRIC PROPERTIES; FILM GROWTH; LANTHANUM; LANTHANUM ALLOYS; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; PULSED LASER DEPOSITION; PULSED LASERS; SURFACE ROUGHNESS; SWITCHING; SWITCHING SYSTEMS; THIN FILMS; TIN; TIN OXIDES; VAPOR DEPOSITION;

OXYGEN VACANCIES;

EID: 82755197108     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.205     Document Type: Conference Paper

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