Electrical properties and interfacial structure of epitaxial LaAlO 3 on Si (001)

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Reiner, J W ^a,b   Posadas, A ^a,b   Wang, M ^a,b   Sidorov, M ^c   Krivokapic, Z ^d   Walker, F J ^a,b   Ma, T P ^a,b   Ahn, C H ^a,b  

^a YALE UNIVERSITY   (United States)

^b Yale University   (United States)

^c Submicron Development Center   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; CAPACITANCE VOLTAGE MEASUREMENTS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DIELECTRIC CONSTANTS; ELASTIC STRAIN; ELECTRICAL PROPERTY; FERMI LEVEL PINNING; GATE OXIDE; INELASTIC ELECTRON TUNNELING SPECTROSCOPY; INTERFACE STATE DENSITY; INTERFACIAL STRUCTURES; LOW TEMPERATURES; NANO-METER-SCALE; OXIDE HETEROSTRUCTURES; POST-DEPOSITION; SI(0 0 1); SRTIO; TEMPLATE LAYERS; UNIT CELLS;

AMORPHOUS SILICON; CRYSTAL GROWTH; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; EPITAXIAL FILMS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SILICON; SILICON COMPOUNDS; SPECTROSCOPY; STRONTIUM ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

LANTHANUM ALLOYS;

EID: 67650266881     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3148243     Document Type: Conference Paper

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