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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 3, 2005, Pages 641-644

Study of interfacial oxide layer of LaAlO3 gate dielectrics on Si for metal-insulator-semiconductor devices

(11) Ling, H a Lu, X a Li, A a Wu, D a Shao, Q a Sheng, J a Liu, Z a Ming, N a Wang, X b Nguyen, B Y b Zhou, H b

a NANJING UNIVERSITY (China)

b MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CONCENTRATION (PROCESS); DIELECTRIC MATERIALS; EXCIMER LASERS; LANTHANUM COMPOUNDS; MICROSTRUCTURE; PARTIAL PRESSURE; PULSED LASER DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICATES; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); INTERFACIAL LAYER; INTERFACIAL REACTION; METAL-INSULATOR SEMICONDUCTOR DEVICES;

MIM DEVICES;

EID: 19944386260 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2266-6 Document Type: Article

Times cited : (4)

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