A comprehensive study of inversion current in MOS tunneling diodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2125-2130

  Lin, C H ^b   Hsu, B C ^b   Lee, M H ^b   Liu, C W ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Inversion current; MOS tunneling diode; Ultra thin oxide

Indexed keywords

BAND TO BAND CURRENT; BAND TO TRAPS; GATE CURRENT; INVERSION CURRENT; MOS TUNNELING DIODES; ULTRATHIN DIOXIDE;

BAND STRUCTURE; ELECTRIC CURRENTS; ELECTRON TRAPS; LIGHTING; MOSFET DEVICES; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; THRESHOLD VOLTAGE;

TUNNEL DIODES;

EID: 0035445463     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944205     Document Type: Article

References (19)

1. Room-temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes
2. Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes
3. A novel photodetector using MOS tunneling structures
4. 2 breakdown model for very low voltage lifetime extrapoation
5. Modeling and simulation of tunneling through ultrathin dielectrics
6. Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
7. Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices
8. Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's
9. A new model for the description of gate voltage and temperature dependence of gate induced drain leakage (GIDL) in the low electric field region
10. Characterization of tunneling current in ultrathin gate oxide
11. A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices
12. A new recombination for devices simulation including tunneling
13. A new analytical diode model including tunneling and avalanche breakdown
14. A new quasi-2-D model for hot-carrier band-to-band tunneling current
15. 2 in direct-tunneling regime
16. Low voltage tunneling in ultrathin oxides: A monitor for interface states and degradation