Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability

Applied Physics Letters

Volumn 92, Issue 2, 2008, Pages

  Rahim, N ^a   Misra, D ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; STACKING FAULTS; THERMODYNAMIC STABILITY;

BIAS TEMPERATURE INSTABILITY; DANGLING BOND SITES; INTERFACE STATE DENSITY; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 38349091967     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2827567     Document Type: Article

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