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Volumn 105, Issue 9, 2009, Pages

Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering

(2) Chang, Chia Hua a Hwu, Jenn Gwo a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONSTANT VOLTAGE; CURRENT TRANSPORT MECHANISM; DC SPUTTERING; DIELECTRIC LEAKAGE; DIELECTRIC STACK; ELECTRICAL CHARACTERISTIC; FOWLER-NORDHEIM; GATE STRESS; IN-PROCESS; IN-SITU; IN-SITU OXIDATION; LOW TEMPERATURES; NATURAL OXIDATION; NON-VOLATILE MEMORY APPLICATION; SHALLOW TRAPS; STACK STRUCTURE; TRAP DISTRIBUTIONS; TRAPPING CENTERS; TRAPPING CHARACTERISTIC; TRILAYER; TRILAYER STRUCTURE; TWO LAYERS;

ALUMINUM; HAFNIUM COMPOUNDS; OXIDATION; SILICON COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 67249095674 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3120942 Document Type: Article

Times cited : (20)

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