메뉴 건너뛰기




Volumn 81, Issue 12, 2010, Pages

Charge-optimized many-body potential for the hafnium/hafnium oxide system

Author keywords

[No Author keywords available]

Indexed keywords


EID: 77955154201     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.125328     Document Type: Article
Times cited : (155)

References (56)
  • 1
    • 14544268556 scopus 로고    scopus 로고
    • Dielectric properties of crystalline and amorphous transition metal oxides and silicates as potential high-κ candidates: The contribution of density-functional theory
    • DOI 10.1088/0953-8984/17/7/R03
    • G. M. Rignanese, J. Phys.: Condens. Matter 17, R357 (2005). 10.1088/0953-8984/17/7/R03 (Pubitemid 40305202)
    • (2005) Journal of Physics Condensed Matter , vol.17 , Issue.7
    • Rignanese, G.-M.1
  • 2
    • 0037096520 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.65.233106
    • X. Y. Zhao and D. Vanderbilt, Phys. Rev. B 65, 233106 (2002). 10.1103/PhysRevB.65.233106
    • (2002) Phys. Rev. B , vol.65 , pp. 233106
    • Zhao, X.Y.1    Vanderbilt, D.2
  • 6
    • 49749083504 scopus 로고    scopus 로고
    • 10.1063/1.2965193
    • V. Cuny and N. Richard, J. Appl. Phys. 104, 033709 (2008). 10.1063/1.2965193
    • (2008) J. Appl. Phys. , vol.104 , pp. 033709
    • Cuny, V.1    Richard, N.2
  • 7
    • 33749489613 scopus 로고    scopus 로고
    • 2 gate oxide by fluorine
    • DOI 10.1063/1.2360190
    • K. Tse and J. Robertson, Appl. Phys. Lett. 89, 142914 (2006). 10.1063/1.2360190 (Pubitemid 44522250)
    • (2006) Applied Physics Letters , vol.89 , Issue.14 , pp. 142914
    • Tse, K.1    Robertson, J.2
  • 8
    • 19944415293 scopus 로고    scopus 로고
    • 2 high K gate oxide
    • DOI 10.1016/j.mee.2005.04.098, PII S0167931705002376, 14th Biennial Conference on Insulating Films on Semiconductors
    • K. Xiong and J. Robertson, Microelectron. Eng. 80, 408 (2005). 10.1016/j.mee.2005.04.098 (Pubitemid 40753120)
    • (2005) Microelectronic Engineering , vol.80 , Issue.SUPPL. , pp. 408-411
    • Xiong, K.1    Robertson, J.2
  • 10
    • 28344448488 scopus 로고    scopus 로고
    • Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique
    • DOI 10.1063/1.2043252, 122901
    • R. Choi, S. C. Song, C. D. Young, G. Bersuker, and B. H. Lee, Appl. Phys. Lett. 87, 122901 (2005). 10.1063/1.2043252 (Pubitemid 41717376)
    • (2005) Applied Physics Letters , vol.87 , Issue.12 , pp. 1-3
    • Choi, R.1    Song, S.C.2    Young, C.D.3    Bersuker, G.4    Lee, B.H.5
  • 11
    • 33846061707 scopus 로고    scopus 로고
    • Modeling the silicon-hafnia interface
    • DOI 10.1016/j.mssp.2006.10.010, PII S1369800106002289, E-MRS 2006 Spring Meeting - Symposium L: Characterization of high-k dielectric materials
    • R. M. Nieminen, M. H. Hakala, and A. S. Foster, Mater. Sci. Semicond. Process. 9, 928 (2006). 10.1016/j.mssp.2006.10.010 (Pubitemid 46073846)
    • (2006) Materials Science in Semiconductor Processing , vol.9 , Issue.6 , pp. 928-933
    • Nieminen, R.M.1    Hakala, M.H.2    Foster, A.S.3
  • 16
    • 10644250257 scopus 로고
    • 10.1103/PhysRev.136.B864
    • P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964). 10.1103/PhysRev.136.B864
    • (1964) Phys. Rev. , vol.136 , pp. 864
    • Hohenberg, P.1    Kohn, W.2
  • 17
    • 0042113153 scopus 로고
    • 10.1103/PhysRev.140.A1133
    • W. Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965). 10.1103/PhysRev.140.A1133
    • (1965) Phys. Rev. , vol.140 , pp. 1133
    • Kohn, W.1    Sham, L.J.2
  • 21
    • 16444366630 scopus 로고
    • 10.1103/PhysRevB.37.6991
    • J. Tersoff, Phys. Rev. B 37, 6991 (1988). 10.1103/PhysRevB.37.6991
    • (1988) Phys. Rev. B , vol.37 , pp. 6991
    • Tersoff, J.1
  • 22
    • 7544236735 scopus 로고
    • 10.1103/PhysRevB.38.9902
    • J. Tersoff, Phys. Rev. B 38, 9902 (1988). 10.1103/PhysRevB.38.9902
    • (1988) Phys. Rev. B , vol.38 , pp. 9902
    • Tersoff, J.1
  • 25
  • 26
    • 2342504498 scopus 로고    scopus 로고
    • 10.1557/JMR.2004.0155
    • T. Iwasaki, J. Mater. Res. 19, 1197 (2004). 10.1557/JMR.2004.0155
    • (2004) J. Mater. Res. , vol.19 , pp. 1197
    • Iwasaki, T.1
  • 27
    • 29044433798 scopus 로고    scopus 로고
    • Molecular-dynamics study of interfacial diffusion between high-permittivity gate dielectrics and germanium substrates
    • DOI 10.1557/JMR.2005.0158
    • T. Iwasaki, J. Mater. Res. 20, 1300 (2005). 10.1557/JMR.2005.0158 (Pubitemid 41787067)
    • (2005) Journal of Materials Research , vol.20 , Issue.5 , pp. 1300-1307
    • Iwasaki, T.1
  • 28
    • 36149002029 scopus 로고
    • 10.1103/PhysRev.36.57
    • J. C. Slater, Phys. Rev. 36, 57 (1930). 10.1103/PhysRev.36.57
    • (1930) Phys. Rev. , vol.36 , pp. 57
    • Slater, J.C.1
  • 29
    • 77955137915 scopus 로고
    • University Mathematical Texts, Oliver and Boyd, Edinburgh
    • I. T. Adamson, Elementary Rings and Modules (University Mathematical Texts, Oliver and Boyd, Edinburgh, 1972).
    • (1972) Elementary Rings and Modules
    • Adamson, I.T.1
  • 43
    • 43049103114 scopus 로고    scopus 로고
    • 2 in its cubic and orthorhombic phase
    • DOI 10.1088/0953-8984/20/04/045213, PII S0953898408563892
    • C. A. Ponce, R. A. Casali, and M. A. Caravaca, J. Phys.: Condens. Matter 20, 045213 (2008). 10.1088/0953-8984/20/04/045213 (Pubitemid 351622724)
    • (2008) Journal of Physics Condensed Matter , vol.20 , Issue.4 , pp. 045213
    • Ponce, C.A.1    Casali, R.A.2    Caravaca, M.A.3
  • 48
    • 33746862976 scopus 로고    scopus 로고
    • 10.1016/j.mee.2006.01.271
    • H. Wong and H. Iwai, Microelectron. Eng. 83, 1867 (2006). 10.1016/j.mee.2006.01.271
    • (2006) Microelectron. Eng. , vol.83 , pp. 1867
    • Wong, H.1    Iwai, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.