-
1
-
-
0035872897
-
-
0021-8979, 10.1063/1.1361065
-
G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 89, 5243 (2001). 10.1063/1.1361065
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 5243
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
2
-
-
34249037392
-
Advanced CMOS device technologies for 45 nm node and below
-
DOI 10.1016/j.stam.2006.11.018, PII S1468699606002361
-
A. Veloso, T. Hoffmann, A. Lauwers, H. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil, M. Jurczak, and S. Biesemans, Sci. Technol. Adv. Mater. 1468-6996 8, 214 (2007). 10.1016/j.stam.2006.11.018 (Pubitemid 46783697)
-
(2007)
Science and Technology of Advanced Materials
, vol.8
, Issue.3
, pp. 214-218
-
-
Veloso, A.1
Hoffmann, T.2
Lauwers, A.3
Yu, H.4
Severi, S.5
Augendre, E.6
Kubicek, S.7
Verheyen, P.8
Collaert, N.9
Absil, P.10
Jurczak, M.11
Biesemans, S.12
-
3
-
-
50349099157
-
-
0038-1101, 10.1016/j.sse.2008.04.034
-
K. Ishimaru, Solid-State Electron. 0038-1101 52, 1266 (2008). 10.1016/j.sse.2008.04.034
-
(2008)
Solid-State Electron.
, vol.52
, pp. 1266
-
-
Ishimaru, K.1
-
4
-
-
37249061772
-
High-k/Ge MOSFETs for future nanoelectronics
-
DOI 10.1016/S1369-7021(07)70350-4, PII S1369702107703504
-
Y. Kamata, Mater. Today 1369-7021 11, 30 (2008). 10.1016/S1369-7021(07) 70350-4 (Pubitemid 350266412)
-
(2008)
Materials Today
, vol.11
, Issue.1-2
, pp. 30-38
-
-
Kamata, Y.1
-
5
-
-
67349222362
-
-
0167-9317, 10.1016/j.mee.2009.03.052
-
A. Toriumi, T. Tabata, C. H. Lee, T. Nishimura, K. Kita, and K. Nagashio, Microelectron. Eng. 0167-9317 86, 1571 (2009). 10.1016/j.mee.2009.03.052
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 1571
-
-
Toriumi, A.1
Tabata, T.2
Lee, C.H.3
Nishimura, T.4
Kita, K.5
Nagashio, K.6
-
6
-
-
73649147380
-
-
0040-6090, 10.1016/j.tsf.2009.10.065
-
A. Molle, S. Baldovino, S. Spiga, and M. Fanciulli, Thin Solid Films 0040-6090 518, S96 (2010). 10.1016/j.tsf.2009.10.065
-
(2010)
Thin Solid Films
, vol.518
, pp. 96
-
-
Molle, A.1
Baldovino, S.2
Spiga, S.3
Fanciulli, M.4
-
8
-
-
10044277098
-
-
0003-6951, 10.1063/1.1812835
-
N. Wu, Q. Zhang, C. Zhu, D. S. H. Chan, M. F. Li, N. Balasubramanian, A. Chin, and D. L. Kwong, Appl. Phys. Lett. 0003-6951 85, 4127 (2004). 10.1063/1.1812835
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 4127
-
-
Wu, N.1
Zhang, Q.2
Zhu, C.3
Chan, D.S.H.4
Li, M.F.5
Balasubramanian, N.6
Chin, A.7
Kwong, D.L.8
-
9
-
-
33748710656
-
Hafnium oxide gate dielectrics on sulfur-passivated germanium
-
DOI 10.1063/1.2338751
-
M. M. Frank, S. J. Koester, M. Copel, J. A. Ott, V. K. Paruchuri, H. Shang, and R. Loesing, Appl. Phys. Lett. 0003-6951 89, 112905 (2006). 10.1063/1.2338751 (Pubitemid 44396616)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.11
, pp. 112905
-
-
Frank, M.M.1
Koester, S.J.2
Copel, M.3
Ott, J.A.4
Paruchuri, V.K.5
Shang, H.6
Loesing, R.7
-
10
-
-
0008917498
-
-
0003-6951, 10.1063/1.126309
-
K. Prabhakaran, F. Maeda, Y. Watanabe, and T. Ogino, Appl. Phys. Lett. 0003-6951 76, 2244 (2000). 10.1063/1.126309
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 2244
-
-
Prabhakaran, K.1
Maeda, F.2
Watanabe, Y.3
Ogino, T.4
-
11
-
-
34247387617
-
x interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
-
DOI 10.1063/1.2723074
-
X. Zou, J. P. Xu, C. X. Li, and P. T. Lai, Appl. Phys. Lett. 0003-6951 90, 163502 (2007). 10.1063/1.2723074 (Pubitemid 46644876)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.16
, pp. 163502
-
-
Zou, X.1
Xu, J.P.2
Li, C.X.3
Lai, P.T.4
-
12
-
-
0002889415
-
-
0169-4332, 10.1016/S0169-4332(97)00511-4
-
T. Deegan and G. Hughes, Appl. Surf. Sci. 0169-4332 123/124, 66 (1998). 10.1016/S0169-4332(97)00511-4
-
(1998)
Appl. Surf. Sci.
, vol.123-124
, pp. 66
-
-
Deegan, T.1
Hughes, G.2
-
13
-
-
0037115685
-
-
0021-8979, 10.1063/1.1522811
-
M. L. Green, M. Y. Ho, B. Busch, G. D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, R. I. Räisänen, D. Muller, M. Bude, and J. Grazul, J. Appl. Phys. 0021-8979 92, 7168 (2002). 10.1063/1.1522811
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 7168
-
-
Green, M.L.1
Ho, M.Y.2
Busch, B.3
Wilk, G.D.4
Sorsch, T.5
Conard, T.6
Brijs, B.7
Vandervorst, W.8
Räisänen, R.I.9
Muller, D.10
Bude, M.11
Grazul, J.12
-
14
-
-
0032614860
-
-
0003-6951, 10.1063/1.124661
-
V. Craciun, I. W. Boyd, B. Hutton, and D. Williams, Appl. Phys. Lett. 0003-6951 75, 1261 (1999). 10.1063/1.124661
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 1261
-
-
Craciun, V.1
Boyd, I.W.2
Hutton, B.3
Williams, D.4
-
15
-
-
36148961661
-
Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric
-
DOI 10.1109/LED.2007.907415
-
R. Xie and C. Zhu, IEEE Electron Device Lett. 0741-3106 28, 976 (2007). 10.1109/LED.2007.907415 (Pubitemid 350111788)
-
(2007)
IEEE Electron Device Letters
, vol.28
, Issue.11
, pp. 976-979
-
-
Xie, R.1
Zhu, C.2
-
16
-
-
17044437005
-
HfO2 high- κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
-
DOI 10.1063/1.1854195, 032908
-
A. Dimoulas, G. Mavrou, G. Vellianitis, E. Evangelou, N. Boukos, M. Houssa, and M. Caymax, Appl. Phys. Lett. 0003-6951 86, 032908 (2005). 10.1063/1.1854195 (Pubitemid 40493493)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.3
, pp. 1-3
-
-
Dimoulas, A.1
Mavrou, G.2
Vellianitis, G.3
Evangelou, E.4
Boukos, N.5
Houssa, M.6
Caymax, M.7
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