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Volumn 98, Issue 10, 2011, Pages

Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition

Author keywords

[No Author keywords available]

Indexed keywords

AIR EXPOSURE; ATOMIC LAYER; CAPACITANCE-VOLTAGE CURVE; DEVICE PERFORMANCE; ELECTRICAL PROPERTY; GE SUBSTRATES; IN-SITU; INTERFACE QUALITY; INVERSION CAPACITANCE; LOWER DENSITY; METAL-OXIDE- SEMICONDUCTORCAPACITORS; NATIVE OXIDES;

EID: 79952651989     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3562015     Document Type: Article
Times cited : (20)

References (16)
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  • 4
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    • Kamata, Y.1
  • 11
    • 34247387617 scopus 로고    scopus 로고
    • x interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
    • DOI 10.1063/1.2723074
    • X. Zou, J. P. Xu, C. X. Li, and P. T. Lai, Appl. Phys. Lett. 0003-6951 90, 163502 (2007). 10.1063/1.2723074 (Pubitemid 46644876)
    • (2007) Applied Physics Letters , vol.90 , Issue.16 , pp. 163502
    • Zou, X.1    Xu, J.P.2    Li, C.X.3    Lai, P.T.4
  • 12
    • 0002889415 scopus 로고    scopus 로고
    • 0169-4332, 10.1016/S0169-4332(97)00511-4
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    • (1998) Appl. Surf. Sci. , vol.123-124 , pp. 66
    • Deegan, T.1    Hughes, G.2
  • 15
    • 36148961661 scopus 로고    scopus 로고
    • Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric
    • DOI 10.1109/LED.2007.907415
    • R. Xie and C. Zhu, IEEE Electron Device Lett. 0741-3106 28, 976 (2007). 10.1109/LED.2007.907415 (Pubitemid 350111788)
    • (2007) IEEE Electron Device Letters , vol.28 , Issue.11 , pp. 976-979
    • Xie, R.1    Zhu, C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.