Temperature dependence of gate current in ultra thin SiO2 in direct-tunneling regime

International Integrated Reliability Workshop Final Report

Volumn , Issue , 1997, Pages 56-61

  Yassine, Abdullah ^a   Hijab, Raif ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITORS; ELECTRIC CURRENTS; ELECTRODES; ELECTRON TUNNELING; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE; ULTRATHIN FILMS;

ARRHENIUS PLOTS; EMISSION CURRENT; GATE CURRENT;

INTEGRATED CIRCUIT TESTING;

EID: 0031389115     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)