Oxide-thickness-dependent suboxide width and its effect on inversion tunneling current

Journal of the Electrochemical Society

Volumn 151, Issue 12, 2004, Pages

  Lin, Yen Po ^a   Hwu, Jenn Gwo ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MOS DEVICES; SEMICONDUCTOR DIODES; SUBSTRATES; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

SATURATION LEVEL; SUBOXIDES; SUBSTRATE INJECTION; TUNNELING CURRENT;

OXIDES;

EID: 10844250271     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1813653     Document Type: Article

References (19)

1. B. Brar, G. D. Wilk, and A. C. Seabaugh, Appl. Phys. Lett., 69, 2728 (1996).
2. Y. H. Shih and J. G. Hwu, IEEE Electron Device Lett., 22, 299 (2001).
3. C. W. Liu, M. H. Lee, M.-J. Chen, I. C. Lin, and C.-F. Lin, Appl. Phys. Lett., 76, 1516 (2000).
4. C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, IEEE Electron Device Lett., 21, 307 (2000).
5. T. J. Maloney, D. E. Aspnes, H. Arwin, and T. W. Sigmon, Appl. Phys. Lett., 44, 517 (1984).
6. Y. Wei, R. M. Wallace, and A. C. Seabaugh, Appl. Phys. Lett., 69, 1270 (1996).
7. F. J. Grunthaner, P. J. Grunthaner, R. P. Vasquez, B. F. Lewis, J. Maserjian, and A. Madhukar, Phys. Rev. Lett., 43, 1683 (1979).
8. S. Horiguchi and H. Yoshino, J. Appl. Phys., 58, 1597 (1985).
9. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B, 38, 6084 (1988).
10. J. W. Keister, J. E. Rowe, J. J. Kolodziej, H. Niimi, H.-S. Tao, T. E. Madey, and G. Lucovsky, J. Vac. Sci. Technol. A, 17, 1250 (1999).
11. A. C. Diebold, D. Venables, Y. Chabal, D. Muller, M. Weldon, and E. Garfunkel, Mater. Sci. Semicond. Process., 2, 103 (1999).
12. A. Paaquarello, M. S. Hybertsen, and R. Car, Phys. Rev. B, 53, 10942 (1996).
13. W. C. Lee and C. Hu, in Proceedings of VLSI Symposium, p. 198 (2000).
14. M. Y. Doghish and F. D. Ho, IEEE Trans. Electron Devices, 39, 2771 (1992).
15. Y.-C. Chen, C.-Y. Lee, and J.-G. Hwu, Solid-State Electron., 45, 1531 (2001).
16. K. J. Yang and C. Hu, IEEE Trans. Electron Devices, 46, 1500 (1999).
17. K. Yang, Y.-C. King, and C. Hu, in Proceedings of the VLSI Symposium, p. 77 (1999).
18. S. T. Pantelides, S. N. Rashkeev, R. Buczko, D. M. Fleetwood, and R. D. Schrimpf, IEEE Trans. Nucl. Sci., 47, 2262 (2000).
19. K. T. Queeney, M. K. Weldon, J. P. Chang, Y. J. Chabal, A. B. Gurevich, and J. Sapjeta, J. Appl. Phys., 87, 1322 (2000).